FDB029N06 Allicdata Electronics

FDB029N06 Discrete Semiconductor Products

Allicdata Part #:

FDB029N06TR-ND

Manufacturer Part#:

FDB029N06

Price: $ 1.68
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 120A D2PAK
More Detail: N-Channel 60V 120A (Tc) 231W (Tc) Surface Mount D²...
DataSheet: FDB029N06 datasheetFDB029N06 Datasheet/PDF
Quantity: 1000
1 +: $ 1.68000
10 +: $ 1.62960
100 +: $ 1.59600
1000 +: $ 1.56240
10000 +: $ 1.51200
Stock 1000Can Ship Immediately
$ 1.68
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 231W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9815pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDB029N06 is a N-Channel MOSFET that falls within the category of single MOSFETs and FETs (field-effect transistors). MOSFETs are especially useful in applications that require a high level of precision, as they can be conveniently tuned for the desired performance through voltage input. This makes them a popular choice for digital systems and applications with complicated electronic circuits.

The FDB029N06 has a drain source voltage rating of up to 600V, with continuous drain current up to 15A. It has a maximum drain source on resistance of only 0.0045Ω at 25°C, making it an excellent choice for high-current applications. It also has a gate threshold voltage of 3V, and a maximum junction temperature of 175°C.

In terms of its applications, the FDB029N06 is suitable for a wide range of applications, such as switching converters, motor control, and other power electronics products. It is often seen used in electric bikes, microcomputer-controlled cars, and LED lighting products. It has a low input capacitance and good thermal stability, making it suitable for high-frequency switching operations.

In terms of its working principle, the FDB029N06 is a type of field-effect transistor (FET) that works by controlling the flow of electric current between its electrodes. A field-effect transistor\'s conduction is controlled by a voltage applied to a gate terminal, and its channel resistance is changed through the gate voltage. It is in that way that the FDB029N06 can be properly tuned for desired input current and output voltage. The MOSFET is an adjustment tool that allows the amplifier to be adjusted for the specific requirements of the application.

Overall, the FDB029N06 is a well-suited single MOSFET with a broad range of applications in power electronics products. It has a drain source voltage rating of 600V, and a continuous drain current of up to 15A. It also has a low input capacitance and good thermal stability, making it well-suited for high-frequency switching operations. With its ability to be precisely tuned for desired performance, the FDB029N06 is an ideal FET for a wide variety of digital systems and complicated electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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