FDB035AN06A0-F085 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	310W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	124nC @ 10V
Series:	Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The FDB035AN06A0-F085 is a type of Field Effect Transistor (FET) made from Gallium Nitride (GaN). GaN-based FETs are becoming increasingly popular due to their faster switching speeds and higher breakdown voltages. This FET offers a particularly high breakdown voltage of 8.5kV, making it ideal for applications where high voltages are present.The FDB035AN06A0-F085 is constructed from a single Gate, Drain and Source. The Gate voltage is the voltage that the device uses to control current flow. The Drain and Source are the terminals between which current can flow when the Gate voltage is applied. The Gate voltage required to achieve full current flow is known as the threshold voltage.The operating principle of the FDB035AN06A0-F085 is based on the Electrostatic Field Effect. When a voltage is applied to the Gate terminal, it creates an electrostatic field which will reduce the resistance between the Drain and Source terminals. The higher the Gate voltage, the lower the resistance and the more current that can flow.The FDB035AN06A0-F085 is commonly used in a variety of high voltage applications. It can be used as a switch in industrial motor drivers and electric vehicle charging systems, as a high voltage protector in power supplies, or as a DC-DC converter in power electronics. It is also suitable for use in radio frequency power amplifiers, grid-tied inverters, high frequency switches and high voltage medical equipment.Due to its high breakdown voltage and fast switching speed, the FDB035AN06A0-F085 is especially well-suited for use in applications where high voltages and high currents are present. It is an efficient, reliable and cost-effective device that can meet the demands of a wide range of applications.The FDB035AN06A0-F085 is a GaN-based FET that offers improved performance over other types of FETs due to its higher breakdown voltage and faster switching speeds. It is designed to withstand high voltages and is commonly used in applications such as motor drivers, power amplifiers, radio frequency switches and power supplies. It is a reliable, efficient and cost-effective device that makes it an ideal choice for a wide range of applications.

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