FDB0250N807L

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FDB0250N807L is a Formox-R N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) specifically designed and tested to guarantee a safe and reliable operation even in high switching frequency and high temperature conditions. This particular MOSFET is designed to be used in automotive applications, such as powertrain and body electronics, engine start/stop systems, power windows, starter alternators, and for powering high side switches, as well as high voltage or high current applications, such as LED lighting, DC-to-DC converters, and motor control.

Application Field

The FDB0250N807L MOSFET is a member of the Formox-R family of transistors, with a drain-source withstand voltage of up to 450V, and a gate-source maximum voltage of 16 V. Its 200 mOhms maximum R_DS(on) is the highest on the market in its class, giving it excellent power dissipation properties that are applicable in power distribution, engine block, and lighting applications. Its unique reverse conduction capability allows it to operate safely in high-power/high current applications due to the superior turn-on/turn-off times. As a result, this MOSFET is a great fit for automotive applications, such as switch loads, automated transmissions, and dynamic brake pressure control.

Working principle

The FDB0250N807L MOSFET uses a metal oxide semiconductor field effect transistor (MOSFET) to control the flow of electrical current in the presence of an applied voltage. A MOSFET consists of four layers (Source, Body, Drain, and Gate), where the Gate is the primary control element. The Gate is a metal oxide layer that acts as a gate between the Source and Drain, controlling the flow of electrons as they are formed in the semiconductor body. This kind of transistor allows for a greater degree of control over current flow, as it is able to withstand higher voltage levels due to its low non-conductance. This makes the FDB0250N807L MOSFET an ideal choice for applications that require precise control of the current flow, such as those found in automotive applications.

The FDB0250N807L MOSFETF has a very fast response time, allowing it to switch in less than 1 microsecond. This helps to reduce power losses due to the higher voltage and makes it very efficient for high frequency applications. This fast response is combined with a low input capacitance and a low power consumption, making it an ideal choice for switching applications.

Finally, the FDB0250N807L MOSFET features an enhanced humidity protection, protecting it from the effects of environmental moisture and condensation. This makes it suitable for use in a wide range of environments, even in areas of high humidity or moisture levels.

Conclusion

The FDB0250N807L is a highly efficient and reliable MOSFET, with high performance characteristics and a robust design. Its unique reverse conduction capability and fast response times make it an excellent choice for high voltage, high current and high frequency applications in automotive and other industrial applications. Its enhanced humidity protection makes it suitable for outdoor applications, even in high humidity or moisture levels.

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