FDB045AN08A0-F085

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDB045AN08A0-F085 is a two-terminal negative channel field effect transistor (FET). It is an insulated-gate bipolar transistor (IGBT) that is suitable for use in high-frequency switching, motor drive and general power control applications. This device is designed to provide high switching speeds and low on-state resistance. It is designed with a low input capacitance, low output capacitance, low gate charge and low gate-source voltage.

The FDB045AN08A0-F085 has an N-type MOSFET structure which is usually operated in enhancement mode. It has a built-in gate protection diode which prevents parasitic thyristor formation when the device is turned off. This FET is designed to operate in a wide range of voltages, from very low gate-source voltages of around 6 volts to very high gate-source voltages of up to 75 volts. It also has high voltage isolation that can reach up to 250 volts.

The FDB045AN08A0-F085 is used in applications such as battery management systems, DC-DC converters, switching power supplies, motor controls, power factor correction and power conditioning. It is often used to switch DC voltages in low to medium power applications such as computer motherboards, graphics cards, power supplies, lighting systems and white goods. This FET is also suitable for use in radio-frequency applications due to its low size and high switching speeds. It can be used in switching batteries, controlling LEDs and in automotive applications.

The working principle of the FDB045AN08A0-F085 is based on the operation of an insulated-gate bipolar transistor (IGBT). It has two terminals, a gate and a source. When a voltage is applied to the gate, a channel is created in the semiconductor material which allows electrons to flow from the source to the drain. The strength of the current is determined by the amount of voltage applied to the gate. The higher the voltage, the more electrons that can flow.

The FDB045AN08A0-F085 is designed to have a low turn-on threshold voltage which means that a relatively low voltage is required to make the device conduct. This makes it ideal for applications where low power consumption is desired. It also has a low input and output capacitance which allows it to work at high frequencies and high switching speeds. Finally, the FET has a low gate charge so that it can operate with low power loss.

The FDB045AN08A0-F085 is a highly efficient and reliable device that can be used in a variety of applications. Its low input and output capacitance and low on-state resistance make it ideal for high frequency switching in low to medium power applications, while its low turn-on threshold voltage makes it suitable for low-power consumption applications. It is also suitable for radio-frequency applications due to its small physical size and high switching speeds. Finally, the built-in gate protection diode prevents parasitic thyristor formation when the device is turned off, meaning that it can be used safely in any environment.

The specific data is subject to PDF, and the above content is for reference