FDB039N06 Allicdata Electronics

FDB039N06 Discrete Semiconductor Products

Allicdata Part #:

FDB039N06TR-ND

Manufacturer Part#:

FDB039N06

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 120A D2PAK
More Detail: N-Channel 60V 120A (Tc) 231W (Tc) Surface Mount TO...
DataSheet: FDB039N06 datasheetFDB039N06 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 231W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8235pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDB039N06 is a transistor that is part of the single MOSFETs family. It consists of a vertical chip and an integrated electronic protection circuit, making it incredibly compact and efficient. It is mainly used in high-voltage applications, including power management and motor control systems.

The FDB039N06 transistor is designed with three pins and a simple construction, making it ideal for many applications. As a single MOSFET, it is composed of two distinct transistors that work together to provide a wide range of capabilities. The two transistors are composed of a N-Channel MOSFET and a P-Channel MOSFET, with the P-Channel MOSFET being responsible for the power supply capability and the N-Channel MOSFET for the load current capabilities. The integrated protection circuit helps protect the device from both overvoltage and shorting.

This device works on the principle of Field Effect Transistors (FETs) which allow signals to be passed through electric fields rather than current. FETs work by having a gate, source, and drain that are connected to a particular material that acts as an electric field. When the electric field is applied, it causes the electric field to conduct current depending on the electric field’s direction. With the FDB039N06 transistor, the electric field is formed with the P-Channel and N-Channel transistors.

The FDB039N06 transistor is used in applications such as high-voltage bridge circuits and high-voltage motor control systems. The device’s integrated protection circuit helps protect against hazardous conditions and helps prevent circuit damage in these applications. The device is also able to operate in both high and low-temperature conditions, meaning it is suitable for a wide range of applications.

Overall, the FDB039N06 is a robust and efficient transistor that is especially useful in high-voltage applications. It works on the principle of Field Effect Transistors (FETs) and is composed of two transistors, a P-Channel and a N-Channel MOSFET, that work together to control the electric fields and provide a wide range of capabilities. The integrated protection circuit helps to protect the circuit and provides a wide range of applications, making the FDB039N06 an ideal choice for power management and motor control systems.

The specific data is subject to PDF, and the above content is for reference

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