FDB0190N807L Discrete Semiconductor Products |
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Allicdata Part #: | FDB0190N807LTR-ND |
Manufacturer Part#: |
FDB0190N807L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 270A D2PAK |
More Detail: | N-Channel 80V 270A (Tc) 3.8W (Ta), 250W (Tc) Surfa... |
DataSheet: | FDB0190N807L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | D²PAK (TO-263) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 19110pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 249nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 34A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 270A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDB0190N807L is a single enhancement mode Field Require Transistor (FET). It has an exceptionally small die size and one of the fastest switching characteristics among the FETs currently in the market. It is a non-volatile device, meaning it retains its programmed values even when power is disconnected.
It is composed of 9 pin elements, with a Drain, Source, and Gate contact. This allows the maximum amount of temperature change between the drain and source potentials of up to 625V. It is rated as a device capable of providing up to 200mA of continuous current, and at 25 degrees Celsius, it can deliver up to 115A pulses of peak current.
In terms of its application, the FDB0190N807L is ideal for a wide range of applications, from computing and communication systems to automotive applications. It is suitable for use in switches, converters, and routers, and can be used as a main switch for power-supply or battery-backup units.
The FDB0190N807L works on the principle of a voltage-controlled gate, or Field Effect Transistor (FET). It works by regulating the current flow through the gate according to the Vgs (voltage between the gate and the source) applied to it. The current flow in the channel between the source and the drain is proportional to the Vgs applied. The greater the Vgs applied, the more current the FET can pass through the channel.
The FDB0190N807L can also be used in an inverting configuration with a negative voltage applied to the gate. In this case, the FET can then be used to control current through the channel between the source and the drain according to the Vgs applied, but with the current flow being in the opposite direction to that caused by the application of a positive voltage.
The FDB0190N807L also has a number of interesting features, including its hysteresis characteristics, which allows it to switch between an ON and OFF state rapidly and accurately. Its low ON-resistance makes it an ideal device for power switches, and its high frequency performance means it is suitable for high speed switching applications. In addition, it has an integrated ESD protection circuit, making it suitable for a wide range of applications.
The FDB0190N807L is an ideal choice for a wide range of applications, from automotive and communications to computing, and it offers a reliable and efficient solution to applications requiring fast switching with high frequency performance. It is a versatile device with a small die size, and it is both cost-effective and dependable.
The specific data is subject to PDF, and the above content is for reference
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