FDB8030L Discrete Semiconductor Products

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FDB8030L is a type of insulated-gate field-effect transistor (IGFET). It belongs to a group of devices referred to as metal–oxide–semiconductor field-effect transistors (MOSFETs). Specifically, it is a N-Channel Enhancement-mode transistor, meaning that when voltage is applied via the gate, the channel between the source and drain regions becomes accepting of current.

The FDB8030L has an on-state resistance of 0.108 Ω max and is capable of blocking high dV/dt. It is particularly useful in high voltage and high power applications, with the ability to stand a drain voltage of up to 600V. Additionally, its ability to withstand high spike voltages up to 700V makes the FDB8030L well-suited to LED lighting applications.

Furthermore, the FDB8030L is capable of a high switching frequency of up to 1.2Mhz, and its thermally-balanced design ensures good thermal properties for higher power applications. This also means that its high avalanche capability, up to 500A, increases its flexibility of use. Finally, its low gate charge, low gate drive power and low gate-source capacitance all make it valuable in power switching applications.

In terms of its working principle, FDB8030L is an enhancement-mode device, which means that it works by adding to or ‘enhancing’ the current already existing between the source and drain regions. When voltage is applied via the gate, a depletion layer instantly forms between the gate-source and gate-drain. This layer modifies the resistance between the source and drain, providing further control over the amount of current that can flow between them.

In short, the FDB8030L is a versatile and reliable IGFET that is ideal for applications that require a high voltage and power, such as LED lighting, power switching and high-frequency switching. Its impressive resistance and ability to withstand high spike voltages make it a great option for these types of applications.

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