FDB8444TS

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Supplier Device Package:	TO-263-5
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	181W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8410pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	338nC @ 20V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	5 mOhm @ 70A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Ta), 70A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to FDB8444TS

The FDB8444TS is a N-Channel MOSFET transistor that is widely used in both consumer and industrial applications. To understand the applications and working principle of FDB8444TS, it is important to first understand what MOSFETs are and how they can be used for various applications.

MOSFET

MOSFET stands for metal-oxide-semiconductor field-effect transistor, and is a type of transistor that relies on a semi-conducting oxide layer to form an ‘effect region’. This effect region is where the majority-carriers flow, and is what allows for the FET to achieve extremely fast switching speeds compared to other types of transistors. MOSFETs are able to control large amounts of power with very little power themselves, making them highly efficient.

Types of MOSFETs

MOSFETs come in two main varieties, N-Channel and P-Channel. N-Channel MOSFETs are used to switch high currents and P-Channel MOSFETs are used to switch low currents. However, both types operate in the same manner. In an N-Channel MOSFET, there are three terminals; the drain, the source, and the gate. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of charge carriers, which are electrons in this case, from the source to the drain. This allows the MOSFET to control large currents with a relatively small gate voltage.

FDB8444TS

The FDB8444TS is an N-Channel MOSFET transistor from the company Fairchild. It is a standard MOSFET which includes a drain, a source, and a gate, and is used for switching high currents. The FDB8444TS has a drain-source voltage of 30V and a maximum drain current of 10A. It also has a very fast switching speed, which makes it ideal for applications that require quick switching times.

FDB8444TS Application Fields

The FDB8444TS is used in consumer and industrial applications. These include AC to DC power supplies, switching power supplies, automotive electronics, motor controls, DC motor drivers, LED lighting, audio power amplifiers, and more. In many cases, the FDB8444TS is used to replace other types of transistor switches, such as BJT or bipolars.

FDB8444TS Working Principle

The working principle of the FDB8444TS is the same as all other MOSFETs. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of electrons from the source to the drain. By controlling the voltage at the gate terminal, the current through the MOSFET can be regulated. This makes the FDB8444TS an ideal switch for controlling high currents in consumer and industrial applications.

Conclusion

The FDB8444TS is a versatile and powerful MOSFET transistor. It can be used in a variety of consumer and industrial applications and is capable of controlling large currents with very little power. It is a fast switching transistor, making it ideal for applications that require quick switching times. Understanding the working principle of the FDB8444TS, as well as its applications, allows for a better understanding of when and how it should be used for different applications.

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