FDB86135

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDB86135 is a P-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with low On-Resistance. It is designed for use in high power switching and voltage regulator applications. With the advancements in semiconductor technology, FDB86135 has become a major player in the semiconductor market.

The FDB86135 is a Single MOSFET transistor capable of delivering current of up to 100A with low On-Resistance. The low On-Resistance of the device makes it ideal for use in high power switching applications. The FDB86135 features an integrated drain source voltage handling capability of 100V and a drain source current rating of 2A.

FDB86135 can be used as a switch in wide variety of applications. It is used in a variety of applications like CCTV, electric light switches, speaker systems, motor control, automotive electronics, LEDs, and power conversion applications. In addition, the FDB86135 is well suited for the use of low side driver, high side driver, and reverse polarity protection. The FDB86135 is also suitable for use in automotive circuit applications due to its integrated electro-magnetic interference suppressor.

The FDB86135 works on the principle of a metal oxide semiconductor (MOS), which is a semiconductor with a metal oxide that is used as a gate dielectric. The MOSFET has no gate oxide and relies on a thin oxide to insulate the gate from the channel. A voltage applied to the gate controls the electrical characteristics of the transistor, allowing it to be used as a switch in various applications.

In its most basic form, the FDB86135 is an enhancement mode MOSFET. That means it will normally be OFF when a gate voltage is not applied. Once a gate voltage is supplied, the FDB86135 will enter its ON state and allow current flow across its drain source channel. This state of the FDB86135 enables it to be used in applications where high power switches are required.

The FDB86135 also features a trench process, which helps keep its On-Resistance low and provides superior protection from electrostatic over-charges. The FDB86135 also has a very low gate threshold voltage, making it suitable for use with low supply voltages.

All in all, the FDB86135 has become a popular choice for high power switching applications due to its low On-Resistance and its integrated electro-magnetic interference suppressor. It is well suited for automotive, speaker systems, motor control, LEDs, CCTV, and electric light switch applications. Additionally, its integration of a trench process and its low gate threshold voltage make it an ideal device for use in low supply voltages.

The specific data is subject to PDF, and the above content is for reference