FDB8160-F085 Allicdata Electronics
Allicdata Part #:

FDB8160-F085TR-ND

Manufacturer Part#:

FDB8160-F085

Price: $ 1.22
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 80A D2PAK
More Detail: N-Channel 30V 80A (Tc) 254W (Tc) Surface Mount TO-...
DataSheet: FDB8160-F085 datasheetFDB8160-F085 Datasheet/PDF
Quantity: 1000
800 +: $ 1.10430
Stock 1000Can Ship Immediately
$ 1.22
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 254W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11825pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V
Series: Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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The FDB8160-F085 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a single transistor and was designed to offer high performance and reliability. The FDB8160-F085 can be used in a wide range of applications, including power, switching, audio/video, control, and automotive.

The FDB8160-F085 has a structure that is different from conventional MOSFETs. It is a vertical double-diffused MOSFET (V-DMOS). The V-DMOS construction of the FDB8160-F085 improves its switching speed, parasitics, and heat dissipation. This makes the FDB8160-F085 suitable for a variety of applications.

The working principle of the FDB8160-F085 is based on the action of two electric fields. An electric field is created by the voltage applied at the input gate of the FDB8160-F085. This field produces a current through the channel between the source and the drain of the FDB8160-F085. The electric field generated at the output terminal of the FDB8160-F085 produces a second current, which is passed through the drain-source circuit of the FDB8160-F085. This produces a voltage across the drain-source. The combined action of the two electric fields changes the output voltage of the transistor.

The FDB8160-F085 is mainly used in power switching applications. It can be used to switch DC and AC loads, such as motors, inductors, transformers, and rectifiers. Since its output voltage can be quickly and accurately changed, the FDB8160-F085 is also suitable for analog switching applications. In these applications, its fast switching speed enables higher resolution and repeatability.

The FDB8160-F085 can also be used in audio/video applications. It can be used to drive large capacitive or inductive loads, such as loudspeakers and subwoofers. Its low on-state resistance and wide temperature range make it suitable for automotive applications. In automotive applications, the FDB8160-F085 can be used for switching power steering and suspension systems.

The FDB8160-F085 can also be used for control applications. It can be used to control motors, lights, and other devices. Its fast switching speed makes it suitable for applications that require precise timing, such as robot control and automation. It can also be used for voltage regulation and power metering.

In conclusion, the FDB8160-F085 is a versatile MOSFET transistor. It can be used in a wide range of applications, including power, switching, audio/video, control, and automotive. Its V-DMOS structure provides improved switching speed, parasitics, and heat dissipation. It is well-suited for applications that require precise timing and voltage regulation.

The specific data is subject to PDF, and the above content is for reference

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