FDB8447L Allicdata Electronics
Allicdata Part #:

FDB8447LTR-ND

Manufacturer Part#:

FDB8447L

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 15A D2PAK
More Detail: N-Channel 40V 15A (Ta), 50A (Tc) 3.1W (Ta), 60W (T...
DataSheet: FDB8447L datasheetFDB8447L Datasheet/PDF
Quantity: 800
1 +: $ 0.53000
10 +: $ 0.51410
100 +: $ 0.50350
1000 +: $ 0.49290
10000 +: $ 0.47700
Stock 800Can Ship Immediately
$ 0.53
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDB8447L is a N-channel enhancement mode MOSFET that is part of the FD-SO8L series developed by Fairchild Semiconductor. It is specifically designed for use in synchronous rectification circuits and is built with the company’s advanced high-density DMOS process.

The FDB8447L is built with a trench MOSFET that has a low on-resistance of 0.0033 Ω, which gives it a very low RDS(ON) at 4.5V and an RDS (on) of 0.017Ω at 4.5V. This makes it suitable for a wide range of applications such as high speed and high efficiency synchronous rectification and switching in computer processors, servers and automotive applications. It requires a low gate drive voltage of 4V and is rated for continuous drain currents up to 5A. The FDB8447L has an avalanche rating of 15A for short pulse applications and a gate threshold voltage of -2V.

The FDB8447L has a common source configuration which is provided with a drain-source voltage of 30V and a gate-source voltage of ±20V. It is rated for an operating temperature range between -55°C to +150°C. The FDB8447L is RoHS compliant and it is available in a surface mount package.

The FDB8447L is an enhancement mode MOSFET and as such it works on the principle of using an electric field to control current flow between the source and the drain. When a small voltage is applied to the gate of the MOSFET, it induces a corresponding electric field which causes the current flow to increase through the channel between the drain and the source. This increase in current is referred to as the enhancement mode of the MOSFET.

The FDB8447L is a perfect device for power management in various applications such as computing, automotive, and home appliance. In computing applications, the device can be used in synchronous rectification circuits which reduce system power losses and improve overall efficiency. The device is also suitable for automotive applications such as power windows, air conditioning, and fuel injectors. Finally, the FDB8447L can also be used in home appliances, such as TVs and audio systems, as it can help reduce power losses and improve the efficiency of the system.

Overall, the FDB8447L is a very reliable and highly efficient N-channel MOSFET. It is designed specifically for synchronous rectification circuits and can be used in a range of applications. The device is RoHS compliant and available in a small surface mount package, making it convenient to use. Finally, the device has a low on-resistance, a low gate drive voltage, a high avalanche rating, and a wide operating temperature range, making it suitable for many power management applications.

The specific data is subject to PDF, and the above content is for reference

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