FDB8880 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDB8880 is an N-Channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for a wide range of applications including linear and switching applications in the GHz frequency range. It has a fast switching speed, making it ideal for use in high speed and high current circuits. The FDB8880 is a high-performance, cost-effective device that offers superior reliability, power handling capability, and high current carrying capacity.

The FDB8880 has a wide range of applications, including high speed signal switching and switching power supply circuits; analog circuits such as amplifiers, voltage control, signal modulation, and signal conditioning; digital circuits, including logic control, bus and memory interfacing, and data conversion; and RF circuits, including high-frequency signal switching, signal amplification, and switched antenna applications. It can also be used in a variety of other applications, including motor control, power management, and audio/video signal processing.

The FDB8880 is based on MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology. A MOSFET is a voltage-controlled, bidirectional device that is used to switch a signal path from source to the load. The FDB8880 has a single-channel, N-type MOSFET with a higher current and frequency range than a P-type MOSFET. It also has a built-in protection diode to protect the circuit from reverse protection and offers superior low on-resistance, providing improved current flow and increased efficiency.

The FDB8880 operates in the enhancement mode, meaning it is turned on with a voltage signal. When the voltage input is applied, the gate-to-source voltage increases and causes an increase in the channel conductivity. The channel conductivity is dependent on the gate-to-source voltage, which is typically 5V or higher. The increase in the channel conductivity results in an increase in the current flow, as the electrons move from source to drain. The FDB8880 has an on-resistance of just 2 ohms, making it an ideal device for high-frequency switching applications.

The FDB8880 eliminates the need for external protection methods, as it is designed to withstand overvoltage, current overshoot, and reverse polarity without fail. Additionally, the FDB8880 is RoHS (Restriction of Hazardous Substances) compliant, making it environment-friendly.

In conclusion, the FDB8880 is a high-speed, high-current MOSFET optimized for a wide range of applications due to its superior performance, cost-effectiveness, protection measures, and RoHS compliance. It is ideal for switching signals, power supplies, and RF circuits, among many other applications. Its fast switching speed and low on-resistance make it a versatile device that is suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference