FDB8832-F085

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The FDB8832-F085 is a Fast Intrinsically Safe mosfet from Fairchild Semiconductor, an integrated circuit manufacturer. The FDB8832-F085 is specially designed for safety applications in the railway, automotive and industrial automation markets. As its name implies, it is a “fast” type of FET, meaning it can switch with a lower gate voltage and allow greater switching speeds compared to conventional MOSFETs. The safe intrinsic property of this device makes it suitable for critical applications where reliably low leakage current and fast switching times are required.

The FDB8832-F085 is a single N-/P-channel enhancement-mode MOSFET, also known as an ENOSFET. ENOSFET’s are a type of MOSFET that allows for the formation of an insulated‐gate field‐effect transistor (IGFET), incorporating a gate dielectric material which offers an extremely high level of isolation between the gate and the source/drain electrodes. An ENOSFET is typically used when the particular circuit requires a bi-directional switch or when the drain terminal needs to be at a higher potential when the gate is at 0V.

The FDB8832-F085 has two function control signals, which it uses to control the various gate transistors – gate-to-source, gate-to-drain, and source-to-drain. It also provides feature protection including an ESD protection circuit and protection against inrush current surges. Its on-resistance is very low at 150m Ω and it has a maximum on-state current drain of 4A. The device is rated for a maximum voltage of 48V and a maximum power of 60W.

In terms of the working principle of the FDB8832-F085, the device works by using a gate-to-source voltage (VGS) to control the conduction of the drain current. When VGS is applied, a two-dimensional electron gas is formed between the gate and the source which raises the threshold voltage (Vt) of the FET, thus allowing a drain current to flow. Once VGS is removed, the voltage across the gate and source will drop and the two-dimensional electron gas will dissipate, leaving the FET in an off state.

The FDB8832-F085 is a versatile and powerful MOSFET with a wide variety of applications. In particular, it is suitable for switching power loads in circuits with high voltage and power requirements such as air conditioning and motor control systems, and it is also used in safety applications due to its intrinsically safe properties. It is also commonly used in high-speed signal transmission applications, such as in digital video and audio signal processing, as well as in automotive engine control systems.

In summary, the FDB8832-F085 is a fast MOSFET that can offer reliability and safety in a range of applications. Its fast switching speeds and low on-resistance make it an ideal choice for power control and signal transmission applications, while its intrinsically safe properties make it suitable for safety-critical applications in the railway, automotive and industrial automation markets. As a result, the FDB8832-F085 is an incredibly versatile and powerful device that can enable engineers and designers to create robust, high-performance and reliable circuits.

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