FDB86569-F085 Allicdata Electronics

FDB86569-F085 Discrete Semiconductor Products

Allicdata Part #:

FDB86569-F085TR-ND

Manufacturer Part#:

FDB86569-F085

Price: $ 0.69
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 80A D2PAK
More Detail: N-Channel 60V 80A (Tc) 94W (Tj) Surface Mount D²PA...
DataSheet: FDB86569-F085 datasheetFDB86569-F085 Datasheet/PDF
Quantity: 1000
1 +: $ 0.69000
10 +: $ 0.66930
100 +: $ 0.65550
1000 +: $ 0.64170
10000 +: $ 0.62100
Stock 1000Can Ship Immediately
$ 0.69
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 94W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Series: Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDB86569-F085 is an advanced connection of FET transistors with a smaller size than regular MOSFET transistors. This allows for a wide range of applications, from low-power digital logic circuits to high-power analog circuits, with a higher level of efficiency and performance than previous models. The FDB86569-F085 offers two configurations: depletion and enhancement.The FDB86569-F085 is classified as a single-gate MOSFET based on its construction. This type of FET transistor has a single gate region, which is responsible for controlling the current flow through the device. The single gate region consists of a conductive, adjustable channel that allows current to flow through when activated by a voltage level. This channel can be controlled by adjusting the voltage level at which current passes through.The main working principle of the FDB86569-F085 is to control the flow of electrical current. This is accomplished by using the gate region to control the current with adjustable voltage levels. In the depletion type of transistor, the voltage level is greater than the intrinsic threshold voltage while in the enhancement type, the voltage level is lower than the intrinsic threshold voltage. As the voltage level is adjusted, so is the flow of current.Given its small size, the FDB86569-F085 is ideal for low-profile applications in digital logic circuits and unwanted high-power analog applications. It can be used in applications such as power supply regulation and inverters, oscillators, AC/DC converters, clock and data drivers, and PWM motor control.In order to optimize the performance of the FDB86569-F085, it is important to consider its various operating parameters, such as the voltage rating, the current rating, the switching speed, and the capacitance. The voltage rating indicates the maximum voltage that the FET can handle without damaging the device. The current rating indicates the maximum amount of current the FET can handle without causing damage. The switching speed indicates the rate at which the gate turns on or off. The capacitance is the amount of stored energy that can be released from the device.The FDB86569-F085 is designed for applications where power and efficiency are paramount. Its small size and wide range of features make it a viable choice for applications where space is at a premium. With its high level of power efficiency, it can vastly improve the performance of analog applications. It is also a great choice for digital logic applications, where its low-power operations and great switching speed are the perfect combination.

The specific data is subject to PDF, and the above content is for reference

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