FDB8870-F085

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The FDB8870-F085 is a type of Field Effect Transistor (FET), more specifically a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This type of FET is a single-channel and is designed for power switch applications, such as motor control, relay circuits, and power supplies. It is also appropriate for use in other areas including telecom and medical devices. In this article, we will explore some of the features of the FDB8870-F085 as well as its working principle.

The FDB8870-F085 features a breakdown voltage of 650V and a maximum gate-source voltage (G-S) of +/-20V, making it suitable for many applications. Its power dissipation is up to 11W and it can handle a maximum drain-source current (D-S) of 8A. In addition, it has a low gate-source capacitance, making it ideal for use in high frequency switching circuits. Furthermore, its low on-state resistance is beneficial for reducing power consumption. The FDB8870-F085 comes in a TO-251AC plastic package with a creepage distance of 8mm.

In terms of its construction, the FDB8870-F085 is a three-terminal device with gate (G), drain (D), and source (S) contacts. The gate controls the current between the drain and source terminals and is insulated from the other two terminals by a thin oxide layer. It is this oxide layer that differentiates FETs from other types of transistors, as it electrically isolates the gate from the other two terminals. When a voltage is applied to the gate terminal, it alters the conductivity of the channel between the drain and source terminals, allowing current to flow when the voltage is sufficient.

In terms of its working principle, the FDB8870-F085 operates in three main regimes, known as the ohmic, saturation and triode regions. The ohmic region is the linear portion of the transfer curve, and is also known as the active region. Here, the current flowing from the drain to the source increases as the gate voltage increases, up to the threshold voltage V_th. Above the threshold voltage, the device reaches the saturation region and the current is limited to its maximum value. For high gate voltages, the device will reach the triode region, where the drain current is independent of the gate voltage.

In addition, the FDB8870-F085 has built-in protection features such as over-voltage protection (OVP) and a sensitive gate protection circuit. The OVP feature ensures that no voltage transient exceeding the maximum gate-source voltage will be applied to the gate terminal, thus protecting the device from over-voltage events. The sensitive gate protection circuit can detect a short circuit between the gate and source and will shut down the device, preventing damage due to an over-current condition.

So, the FDB8870-F085 is a type of MOSFET that is suitable for a wide range of applications, including power supply and motor control systems. Its low on-state resistance, low capacitance and fast switching speed make it an attractive choice for many applications. It has built-in protection features such as over-voltage protection and a sensitive gate protection circuit, as well as three operational modes - ohmic, saturation and triode. Understanding its features and working principle can help engineers make better informed decisions when choosing components for their designs.

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