FDB8444-F085 Discrete Semiconductor Products |
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Allicdata Part #: | FDB8444-F085TR-ND |
Manufacturer Part#: |
FDB8444-F085 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 70A D2PAK |
More Detail: | N-Channel 40V 70A (Tc) 167W (Tc) Surface Mount TO-... |
DataSheet: | FDB8444-F085 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 167W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8035pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 128nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 70A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
Description
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The FDB8444-F085 is a professional-grade power MOSFET device designed for use in a variety of high-voltage applications. It is an Integrated Circuit (IC) designed to be used as a power transistor, providing an efficient level of power to anything that requires one. The FDB8444-F085 is ideal for applications such as DC/DC converters, motor drives, and inverters. It is built in a compact 8-pin SOIC package to provide numerous advantages in terms of space-saving and easy integration into any system.The FDB8444-F085 is equipped with a high-voltage N-channel power MOSFET in an integrated circuit. It is a power-optimized device, offering high-efficiency switching in a low-voltage and low-rise time environment. The device’s power MOSFET reduces switching losses by allowing current to be controlled quickly and reliably. This makes it an ideal choice for power management applications, including DC/DC converters, motor drives, and inverters.In terms of the device’s physical characteristics, the FDB8444-F085 is equipped with a package size of 8-pin SOIC (Small-Outline Integrated Circuit). The total power dissipation of the device is 350W, and it is capable of providing a maximum output current of 3A. It has an operating temperature range of -55°C to +150°C, and it is designed to work with a maximum voltage of 600V. Furthermore, it has a typical switching frequency of 100MHz and a minimum on-state resistance (RDS(on)) of 75mΩ.To provide robust performance, the FDB8444-F085 is built with a wide range of features. These features include a low gate charge (18nC maximum), a low threshold voltage (1V), and a low on-resistance (75mΩ). In addition, it has a high breakdown voltage (600V) and a high current rating (3A). The device also provides superior temperature protection, as it can function reliably from -55°C to +150°C.The working principle of the FDB8444-F085 is based on MOSFET technology. In brief, a MOSFET is a voltage-controlled semiconductor device that acts as a switch, allowing current to flow or not. In the FDB8444-F085, the MOSFET’s gate is electrically isolated from its source and drain. When a positive voltage is applied to the gate, it attracts electrons and allows current to flow through the device. The magnitude of the current is determined by the voltage applied to the gate. Conversely, when the voltage is removed, the current is shut off, allowing the device to act as an insulated switch.In conclusion, the FDB8444-F085 is a high-efficiency MOSFET device designed for a variety of power management applications. It is equipped with a high-voltage N-channel power MOSFET in an integrated circuit and provides superior temperature protection with a maximum operating temperature of +150°C. The device’s power MOSFET enables efficient current control and helps reduce switching losses. Additionally, it has an 8-pin SOIC package for easy integration and a wide range of features for robust performance.
The specific data is subject to PDF, and the above content is for reference
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