FDB86366-F085

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FDB86366-F085 is a Power MOSFET device specifically designed for high applications in consumer, computer, and industrialapplications. It is a single enhancement-mode transistor that is used to switch high power with low-voltage sources.

The device contains two regions of silicon with a matched doping level, providing good electrical control. The device has a low gate leakage current which enables it to minimize heat losses and operating costs. The device also features a fast switching time and a large operating voltage range.

The basic operation of FDB86366-F085 is simple. The gate voltage created by an external source is applied across the gate and source electrodes to form a voltage between the two electrodes. This voltage causes a current to flow through the silicon substrate, resulting in the transfer of electrical charge. The result is a voltage drop across the drain and source which can be used to switch power loads.

FDB86366-F085 can be used in a variety of applications including automotive, industrial, and consumer power supplies. It is ideal for applications such as lighting, power regulation, and motor control. The device has a low on-state resistance, high breakdown voltage, and low maximum gate charge. This makes the device well suited for applications where high switching speeds and low power losses are desired.

The device is also able to handle high temperatures and has a low input capacitance, making it suitable for applications where high frequency performance is important. Additionally, the FDB86366-F085 is able to withstand a high voltage spike, making it suitable for use as an overvoltage protection device.

Overall, FDB86366-F085 is an ideal choice for a wide range of high power applications. Its low on-state resistance, fast switching time, and low maximum gate charge make it an ideal choice for applications where power efficiency is critical. Additionally, its high breakdown voltage and low input capacitance makes it suitable for high frequency applications. Finally, its ability to withstand high voltage spikes make it an ideal choice for use as an overvoltage protection device.

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