FDB8132 Allicdata Electronics
Allicdata Part #:

FDB8132-ND

Manufacturer Part#:

FDB8132

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 80A D2PAK
More Detail: N-Channel 30V 80A (Tc) 341W (Tc) Surface Mount D²P...
DataSheet: FDB8132 datasheetFDB8132 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 341W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 14100pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 13V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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FDB8132 is a type of field-effect transistor (FET) components that is able to function as either an amplifier or switch. Unlike bipolar transistors, FETs use electrical fields to control current, resulting in low noise amplification and/or switching. FDB8132 is a single, N-Channel, Enhancement Mode FET manufactured in the PMOS process, with a very low on-state resistance. The FDB8132 is commonly used in electronic circuits, including power management, lighting, and audio applications, due to its versatility.

Application Field

The FDB8132 is commonly used in various applications, including power management, lighting, and audio equipment. They are preferred in these applications due to their small size, high efficiency, and low on-state resistance. In power management applications, the FDB8132 can be used to provide current control and switching as well as voltage regulation. As a switch they are used to control the current in a circuit, but they can also be used to control the voltage in a circuit by using voltage regulation. In lighting applications, the FDB8132 can be used as a dimmer or speed control, owing to their high efficiency. Finally, in audio applications, the FDB8132 is often used as a pre-amplifier and/or as an amplifier.

Working Principle

The FDB8132 operates based on the principle of an MOSFET (metal-oxide semiconductor field-effect transistor). This type of transistor is constructed from an insulated gate semiconductor, which consists of a layer of insulation followed by a thin layer of semiconductor material. The gate allows for an electric field to be present that can control the flow of current through the transistor. This electric field is created by applying an electric voltage to the gate, which modifies the electric field and thus the conductive properties of the semiconductor.

When an electric voltage is applied between the source and drain of the FDB8132, a tiny current passes through the electrode between the semiconductor layers. This current modifies the electric field between the gate and the source, which in turn modifies the conductive properties of the semiconductor. The amount of current that passes through the gate determines the amount of current that passes through the transistor itself. The application of electric voltage between the gate and source of the FDB8132 is known as the "gate voltage". By changing the gate voltage, the amount of current that passes through the FDB8132 can be controlled, allowing for either amplification or switching.

The specific data is subject to PDF, and the above content is for reference

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