FDB8441-F085 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	15000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	280nC @ 10V
Series:	Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:	2.5 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	28A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Last Time Buy
Packaging:	Tape & Reel (TR)

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The FDB8441-F085 is a single-channel, enhancement-mode field-effect transistor (FET). This FET is an N-channel, rare-earth-doped transistor which operates by using a gate voltage to control the current through a source-drain path. It is an efficient device for controlling how much current flows through various types of circuits, including digital logic and other electrical applications. To understand what makes the FDB8441-F085 unique and how to make the most out of this device, it is first important to understand its operation and what types of applications it is best suited for.

The FDB8441-F085 operates as any other transistor does: by changing the voltage present at the gate (G), it is possible to control the current flow between the source (S) and drain (D). The principal operating characteristics of the FDB8441-F085 include cut-off voltage (VGS(th), which is the gate-source voltage necessary for the FET to turn fully on or off), source-drain current (ID), and transconductance (gm, which is the rate of change of source-drain current with respect to gate-source voltage). The FDB8441-F085 has a gate-source voltage of 5.0-14.0 V, a maximum drain current rating of 4.0 A, and a maximum transconductance rating of 1.0 S.

The FDB8441-F085 is used in a wide range of applications. Its primary purpose is to act as a switch that can be used to control current between the source and drain. It can be used in digital logic circuits to switch between high and low states, allowing information to be encoded in binary form. It is also used in power-supply designs to regulate the amount of current flowing from one point to another. It is also used in audio systems to switch between different frequencies and in motor drive circuits for controlling the rotation speed of motors.

To work at its best, the FDB8441-F085 needs to be placed within a circuit in a way that optimizes its performance. Generally, this means connecting the gate, source, and drain in such a way that the gate-source voltage is as close as possible to the desired operating point. To enable the FET to work efficiently, the voltage should be set such that the gate-source voltage when on is lower than the cut-off voltage and the gate-source voltage when off is higher than the cut-off voltage. This allows the FDB8441-F085 to switch quickly and accurately between the on and off states. In addition, the power supply should be connected as close to the FET as possible, with the ground line connected to the source to minimize the voltage drop between the source and the ground.

In summary, the FDB8441-F085 is a single-channel, enhancement-mode field-effect transistor. It acts as a switch, using a gate voltage to control the current flow between the source and drain. It can be used in a wide range of applications, such as digital logic circuits, power supplies, audio systems, and motor drive circuits. To ensure optimal performance, it should be connected to the power supply and ground in such a way that the gate-source voltage is as close as possible to the desired operating point.

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