FDB8443-F085

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FDB8443-F085 is a high-power Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It is derived from the Aluminum Gallium Arsenide (AlGaAs) family which are efficient and power-saving devices with high reliability.

The FDB8443-F085 offers low on-resistance with excellent temperature and gate-voltage characteristics. It features a maximum drain-source voltage of 1200V, a maximum drain current of 115A and a maximum power dissipation of 930W. It is especially suitable for applications such as switching power supplies, Motor drives, AC loads, DC loads, and switching regulators.

The device is composed of a crystalline silicon substrate and a double-layer structure composed of gallium arsenide and gallium arsenide aluminum, with a special dye pattern. The silicon substrate of this device has a modified surface field effect which is designed to control the flow of the electrons in the device. The doping process for the Gate oxide used in this transistor is completely covered with a dielectric layer.

The working principle of the FDB8443-F085 is that when voltage is applied to its Gate, an electric field is generated which attracts carriers from the source and forms a 2-dimensional charge in the channel. This is known as the "pinch-off" effect, and it results in the current flow being reduced. When the source-drain voltage is high enough, it can create a "barrier" to electron flow, which is referred to as the "avalanche effect". The amount of current that can flow through the transistor is regulated by the Gate voltage.

In addition to its excellent power handling capabilities, the FDB8443-F085 has low thermal resistance and features low gate charge which enhances its compatibility with power switching applications. It is suitable for operating frequencies up to 100kHz. The device has an extremely low gate capacitance which helps to reduce the switching time of the device. It also has an annealed silicon surface which reduces noise.

The FDB8443-F085 is a robust and reliable device, offering a long lifetime and stable performance. Its high power capabilities and low gate charge make it an excellent choice for high-power and power-saving applications.

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