| Allicdata Part #: | FDB8874-ND |
| Manufacturer Part#: |
FDB8874 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 121A TO-263AB |
| More Detail: | N-Channel 30V 21A (Ta), 121A (Tc) 110W (Tc) Surfac... |
| DataSheet: | FDB8874 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3130pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 121A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The FDB8874 is a High-Performance Logic-Level N-Channel MOSFET designed to replace SOT-223 bipolar transistors in most general-purpose applications due to its low RDS(ON). This device has been optimized for logic circuits that require superior characteristics compared to other regular products.
The FDB8874 is an excellent choice for use in a variety of switching applications, including small signal inverters, level shifters, charge pumps, local oscillators, bus switch buses, and general purpose switching where ultra-low on resistance is needed. It also can be used in free wheeling circuits to drive inductive loads, small motors and power transistor collectors.
FDB8874 features a high current carrying capacity of up to 2A for typical operation, which makes it ideal for use in automotive and industrial applications. The device also features fast switching times, with a fall time of typically 2.5ns and rise time of typically 9.5ns.
The FDB8874 is a logic level MOSFET, so it has a special biasing requirement. Instead of just applying a fixed voltage between the gate and source of the device to turn it on, the appropriate biasing voltage needs to be provided. Generally, the voltage applied should not exceed 4V, which is the optimal biasing level to ensure that the device operates with its lowest RDS(ON) and offers the best performance.
The FDB8874 works on the basic principle of MOSFETs, where a small input voltage applied to the Gate terminal controls the current flowing through the Source and Drain terminals. Electrons from the source terminal pass through the channel between the source and drain terminals when the gate voltage is higher than the source voltage, allowing current to flow between the terminals.
The number of electrons that can move through the channel is proportional to the voltage applied to the gate, and the current from source to drain is the product of the number of electrons and the applied voltage. This means that by controlling the voltage at the gate, the source and drain currents can be controlled.
The FDB8874 offers excellent thermal characteristics and can handle high current density due to its low on-resistance. It also has high maximum power dissipation, making it suitable for use in high-power applications. It is compatible with both Lead-Free Reflow and Vapor-Phase soldering processes, and is RoHS compliant.
Overall, the FDB8874 is a cost effective solution for applications requiring low on-resistance, fast switching times, and improved thermal characteristics. It is an ideal replacement for SOT-223 bipolar transistors in general-purpose applications, as it offers superior performance and comes at a much lower cost. With its various features and excellent thermal characteristics, it is well suited for automotive, industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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FDB8874 Datasheet/PDF