Allicdata Part #: | FDB8160-ND |
Manufacturer Part#: |
FDB8160 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 80A D2PAK |
More Detail: | N-Channel 30V 80A (Tc) 254W (Tc) Surface Mount TO-... |
DataSheet: | FDB8160 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 254W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11825pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 243nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDB8160 is a high-voltage field-effect transistor (FET) used in power switching circuits. It is a single-die, unipolar device that utilizes silicon-on-insulator (SOI) technology to maximize device performance. The FDB8160 is manufactured in a low-power CMOS process and, as such, offers several advantages over conventional FETs. It has a low operating voltage of less than 4.5V and exhibits extremely low on-resistance which translates to improved power dissipation. Additionally, the FDB8160 has a wide safe operating temperature range, making it suitable for a variety of applications.
The FDB8160 is a Depletion-Mode Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). A MOSFET is an electrically-controlled switch, with the metal-oxide-semiconductor part representing the three electrodes, the source, the drain, and the gate. The power switches used in power switching circuits are usually depletion-mode MOSFETs, as opposed to enhancement-mode MOSFETs. This is due to the fact that depletion-mode MOSFETs require the application of voltage to the gate to cause the device to turn off.
In operation, the FDB8160 utilizes the principle of electrostatic pinch off. An electric field created between the gate and the channel region serves to deplete the channel area of carriers. When the potential difference between gate and channel surpasses a certain ‘threshold voltage’, the device is pinched off and current is not able to flow between drain and source. In this way, the FDB8160 acts as an energy efficient switch.
The FDB8160 can be used in a variety of applications, such as power regulation, motor control, and in consumer electronics. Its wide safe operating temperature range makes it suitable for use in high temperature environments. Its low operating voltage also means it can be used in circuits that require lower power consumption. Additionally, its low on-resistance performance makes it suitable for power switching applications where loss of power is undesirable and efficiency is key.
In conclusion, the FDB8160 is an excellent choice for anyone looking for a reliable and efficient MOSFET switch for a variety of applications. Its low operating voltage and extremely low on-resistance make it an ideal choice for power switching circuits. Its wide safe operating temperature range also makes it suitable for use in high temperature environments such as automotive and consumer electronics. With its impressive performance and versatile application field, the FDB8160 is a must-have component in any electronic device that needs efficient power switching.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDB8444TS | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 40V 70A D2PAK... |
FDB8876 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 71A D2PAK... |
FDB8878 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 48A D2PAK... |
FDB86102LZ | ON Semicondu... | -- | 800 | MOSFET N-CH 100V 30A D2PA... |
FDB8444 | ON Semicondu... | -- | 800 | MOSFET N-CH 40V 70A TO-26... |
FDB8132_F085 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 80A D2PAK... |
FDB8132 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
FDB8160 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
FDB8874 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 121A TO-2... |
FDB8442 | ON Semicondu... | -- | 1000 | MOSFET N-CH 40V 80A D2PAK... |
FDB8453LZ | ON Semicondu... | -- | 1000 | MOSFET N-CH 40V 16.1A TO-... |
FDB86360_SN00307 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 80VN-Channel ... |
FDB8445 | ON Semicondu... | 0.81 $ | 1000 | MOSFET N-CH 40V 70A D2PAK... |
FDB86563-F085 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 110A TO-2... |
FDB86360-F085 | ON Semicondu... | 1.93 $ | 1000 | MOSFET N-CH 80V 110A TO26... |
FDB8870-F085 | ON Semicondu... | 0.85 $ | 1000 | MOSFET N-CH 30V 21A TO-26... |
FDB86566-F085 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 110A D2PA... |
FDB8444-F085 | ON Semicondu... | -- | 1000 | MOSFET N-CH 40V 70A D2PAK... |
FDB8443-F085 | ON Semicondu... | 0.95 $ | 1000 | MOSFET N-CH 40V 25A TO-26... |
FDB86366-F085 | ON Semicondu... | 0.99 $ | 1000 | MOSFET N-CH 80V 110A TO26... |
FDB8442-F085 | ON Semicondu... | 1.06 $ | 1000 | MOSFET N-CH 40V 28A D2PAK... |
FDB8860-F085 | ON Semicondu... | 1.1 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
FDB8832-F085 | ON Semicondu... | 1.23 $ | 1000 | MOSFET N-CH 30V 34A D2PAK... |
FDB8441 | ON Semicondu... | -- | 5600 | MOSFET N-CH 40V 80A D2PAK... |
FDB8160-F085 | ON Semicondu... | 1.22 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
FDB8443 | ON Semicondu... | -- | 1000 | MOSFET N-CH 40V 120A TO-2... |
FDB8860 | ON Semicondu... | -- | 800 | MOSFET N-CH 30V 80A D2PAK... |
FDB86569-F085 | ON Semicondu... | 0.69 $ | 1000 | MOSFET N-CH 60V 80A D2PAK... |
FDB8441-F085 | ON Semicondu... | -- | 1000 | MOSFET N-CH 40V 80A D2PAK... |
FDB8896-F085 | ON Semicondu... | 0.64 $ | 1000 | MOSFET N-CH 30V 19A TO-26... |
FDB8445-F085 | ON Semicondu... | 0.67 $ | 1000 | MOSFET N-CH 40V 70A D2PAK... |
FDB8870 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 23A TO-26... |
FDB8030L | ON Semicondu... | -- | 1600 | MOSFET N-CH 30V 80A D2PAK... |
FDB86135 | ON Semicondu... | -- | 800 | MOSFET N-CH 100V D2PAKN-C... |
FDB8880 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 54A TO-26... |
FDB8447L | ON Semicondu... | -- | 800 | MOSFET N-CH 40V 15A D2PAK... |
FDB8896 | ON Semicondu... | -- | 1600 | MOSFET N-CH 30V 93A TO-26... |
FDB8832 | ON Semicondu... | -- | 5600 | MOSFET N-CH 30V 80A D2PAK... |
FDB86363-F085 | ON Semicondu... | 1.35 $ | 1000 | MOSFET N-CH 80V 110A TO26... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...