FDB86360-F085

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	333W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	14600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	253nC @ 10V
Series:	Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:	1.8 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	110A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDB86360-F085 application field and working principle

The FDB86360-F085 is a device designed to act as a single Field-Effect Transistor (FET). It is part of Fairchild’s F-Series family of FETs and it is used as a high current switch in a wide range of applications. This article will provide an overview of the device’s application fields and explain its working principle.

Application fields

The FDB86360-F085 is most commonly used in power management applications such as motor speed control, DC/DC converters, and load switching. It is also used in industrial applications, automotive applications, audio amplifiers, and many other electronic circuits. Additionally, it can be used in switched-mode power supplies as it can be used to switch high currents with much higher efficiency than conventional transistors.

Design and features

The FDB86360-F085 is a single transistor component with two leads (drain and source). It is available in a SOIC-8 package, making it easy to install in most circuits. It has a maximum drain-source voltage of 20 V and a maximum drain current of 6 A. The maximum on-resistance is 25 mΩ and the maximum gate-source charge is 20 mC. The device is also ESD-protected up to 2 kV.

Working principle

The FDB86360-F085 works using the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) principle. This means that when a voltage is applied to the gate terminal, a channel is created between the source and the drain of the device. This causes current to flow from source to drain. The size of the channel is dependent on the voltage applied to the gate terminal, so the voltage applied to the gate controls the current flow.When a negative voltage is applied to the gate terminal, the channel is cut off and the device is in the “off” state. When a positive voltage is applied to the gate terminal, the channel is opened and the device is in the “on” state. This makes the FDB86360-F085 an ideal device for high current switching applications.

Conclusion

The FDB86360-F085 is a single Field-Effect Transistor designed for switching high current applications. It has a maximum drain-source voltage of 20 V, a maximum drain current of 6 A, and a maximum on-resistance of 25 mΩ. It is most often used in power management applications such as motor speed control, DC/DC converters, and load switching, as well as in many other electronic circuits. It works using the MOSFET principle, meaning that current flow is controlled by the gate voltage.

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