
FDB8442 Discrete Semiconductor Products |
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Allicdata Part #: | FDB8442TR-ND |
Manufacturer Part#: |
FDB8442 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 80A D2PAK |
More Detail: | N-Channel 40V 28A (Ta), 80A (Tc) 254W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 254W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 235nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Ta), 80A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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FDB8442 is a high voltage MOSFET that has the capability of handling high power and providing very low on-resistance when used in power switching applications. It features a low gate charge, high blocking voltage, low threshold voltage, and low on-resistance.
The FDB8442 is a type of field-effect transistor (FET), or more specifically, a metal–oxide–semiconductor FET (MOSFET). It is a single-polarity device, which means that it has a single field-effect region, and that it remains operational when the bias is reversed.
This FET is suitable for very low-voltage applications, such as instrumentation and medical devices, due to its ultra-low gate-threshold voltage (Vth) of 0.8 volts. It can be used in a variety of high power applications, including industrial motor control, automotive motor control, switching power supplies, and lighting applications.
Unlike bipolar transistors, which use a current flow between two electrical terminals to control current, FETs, like the FDB8442, use an electric field and gate voltage to control current. This means that the device needs very little current to be able to turn the transistor on or off.
To control the FDB8442, the gate voltage needs to be set in order for a current to flow through the device. The gate voltage applied to the FET will be calculated relative to the source voltage. If the gate voltage is greater than the source voltage, the FET will be off, and if it is less than the source voltage, the FET will be on. The threshold voltage for the device is 0.8 volts.
An advantage of using FETs is their low input capacitance, which reduces signal switching interference and improves power supply stability. FETs also have a low on-state resistance, which reduces power losses and increases efficiency. The FDB8442 has a low on-state resistance of 0.2 ohms.
The FDB8442 offers protection against electrostatic discharge (ESD). It can be protected against over-current, over-voltage and under-voltage shorts, as well as reverse-battery protection.
Due to its high voltage and low on-state resistance, the FDB8442 can be used in power switching applications, such as in switching power supplies, motor control systems, and other high power electronics. The FDB8442 is also ideal for use in lighting applications, as it can handle large currents with minimal losses.
The FDB8442 is a high voltage MOSFET that can handle high power, thanks to its low gate charge, high blocking voltage, low threshold voltage, and low on-state resistance. It can be used in a variety of applications where low voltage, ESD protection, and high efficiency are requirements. Its low input capacitance helps to reduce switching interference, and its low on-state resistance reduces power losses. The FDB8442 is ideal for use in power switching, motor control and lighting applications.
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