FDB8453LZ Discrete Semiconductor Products |
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| Allicdata Part #: | FDB8453LZTR-ND |
| Manufacturer Part#: |
FDB8453LZ |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 40V 16.1A TO-263AB |
| More Detail: | N-Channel 40V 16.1A (Ta), 50A (Tc) 3.1W (Ta), 66W ... |
| DataSheet: | FDB8453LZ Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 66W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3545pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 7 mOhm @ 17.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16.1A (Ta), 50A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDB8453LZ is one of the latest and most advanced type of single N-type MOSFET semiconductor components. It is known for its robust performance, reliable quality and high level of efficiency. A single N-type MOSFET is an integrated circuit chip which is used in various applications. It is best suited for use in applications that require switching and amplification capabilities. The FDB8453LZ is an ideal choice for applications such as
- Power switching and conversion
- High speed data processing
- Power amplifiers
- Motor control circuits
- Industrial control systems
- Power regulation and control
- High voltage applications
- AC/DC switching
The FDB8453LZ is a single N-type MOSFET device with a maximum current rating of 8A. It is designed with a power MOSFET chip and a built-in N-channel MOSFET which is optimized for use in applications with high drain-source voltage and low gate-source voltage. The FDB8453LZ includes a high-performance on-resistance which is used to control the current levels in the device. It also includes a sense resistor which helps to reduce power dissipation.
The FDB8453LZ also offers a number of other benefits and features. It has a low Gate charge, which helps to reduce the power losses. It is also one of the few single N-type MOSFETs that are rated for use in power conditioning circuits. Its low on-resistance makes it ideal for use in applications that require high-speed switching or control.
The FDB8453LZ operates on a single supply of 5.5V and is designed with an integrated gate driver. This gate driver provides an isolation between the input signal and the drain-source voltage, which helps to reduce noise in the circuit. The FDB8453LZ also has patented protections features which help to reduce the risk of damage from over-voltage or under-voltage conditions.
The FDB8453LZ is one of the best single N-type MOSFETs available on the market. It has all the features that are needed in a single N-type MOSFET, while also having a number of additional benefits which make it ideal for use in many different applications. The FDB8453LZ is a robust and reliable device which delivers efficient operation and is perfect for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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FDB8453LZ Datasheet/PDF