Allicdata Part #: | FDMC4435BZ-F126TR-ND |
Manufacturer Part#: |
FDMC4435BZ-F126 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 8.5A |
More Detail: | P-Channel 30V 8.5A (Ta), 18A (Tc) 2.3W (Ta), 31W (... |
DataSheet: | FDMC4435BZ-F126 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-MLP (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2045pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta), 18A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMC4435BZ-F126 is a FET or Field Effect Transistor that is used in applications that require reduced switching speed as well as low on-resistance and low gate charge. This type of transistor is also referred to as a “single-gate FET” because it features just one control gate, compared to two or more found in more complex FETs. As such, the FDMC4435BZ-F126 can be used in power switching, audio power amplifiers and other similar applications.
The FDMC4435BZ-F126 operates on the principle of an electric field being applied between a gate electrode and the channel of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Depending on the polarity of the applied field, the channel is either completely “on” or completely “off”, thus allowing the FET to act as a switch. This type of transistor is valuable because it has very low on-resistance, meaning it can pass more current than most other transistors, while also having very low gate charge, meaning that it requires relatively small gate voltages (which have to be applied in order for the FET to switch).
Although the FDMC4435BZ-F126 is very useful for power switching, it is also useful for applications like home audio power amplifiers, as it can maintain high power performance with low distortion levels. The FET also helps reduce power dissipation, power losses and heat buildup, thus making it a great choice for applications that must meet strict energy efficiency standards. This FET can also handle intermittent or overloaded conditions, which makes it suitable for applications that require high current switching.
In addition to its wide range of applications, the FDMC4435BZ-F126 has many advantages over other types of FETs. For example, it requires no additional bias circuitry, which not only reduces the size of the overall design, but also minimizes power consumption. It also features a “channel breakdown voltage” which is several times higher than that of other FETs. This allows it to handle higher voltages more easily, making it suitable for environments that require high voltage switching.
In conclusion, the FDMC4435BZ-F126 is an excellent choice for a variety of applications, from power switching to audio power amplifiers. It has many advantages, such as low on-resistance, low gate charge, and no additional bias circuitry, which makes it highly efficient. Additionally, its relatively high channel breakdown voltage makes it suitable for high voltage switching. As such, it is an ideal choice for many modern applications.
The specific data is subject to PDF, and the above content is for reference
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