FDMC6679AZ Allicdata Electronics
Allicdata Part #:

FDMC6679AZFSTR-ND

Manufacturer Part#:

FDMC6679AZ

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V POWER33
More Detail: P-Channel 30V 11.5A (Ta), 20A (Tc) 2.3W (Ta), 41W ...
DataSheet: FDMC6679AZ datasheetFDMC6679AZ Datasheet/PDF
Quantity: 1000
1 +: $ 0.21600
10 +: $ 0.20952
100 +: $ 0.20520
1000 +: $ 0.20088
10000 +: $ 0.19440
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDMC6679AZ is a unidirectional N-type MOSFET that belongs to the class of transistor field-effect transistors (FETs). The term FET is an acronym for "field-effect transistor", which describes a type of transistor that works using an electric field to control the transfer of electrons. The FDMC6679AZ is a single FET, meaning it consists of a single element – the gate (which contains the field-effect transistor) – rather than a pair of elements, as is the case with a dual FET.

The FDMC6679AZ is designed for high-frequency applications and offers a wide operating range of -40°C to +70°C, with a single input signal to the gate. It is rated for industrial and consumer applications such as power electronics and DC power supplies, as well as communication and mobile systems.

The FDMC6679AZ works by using an electric field to control the movement of charge carriers, which are electrons. The electric field creates an adjustable barrier between the source and drain (two contacts) of the FET, thus regulating the flow of charge carriers across the channel. This is referred to as the “transconductance” of the FET, which is what allows it to regulate the current flow.

The FDMC6679AZ has an optimized channel profile, which makes it suitable for applications that require a low operating voltage and high current density. The device also features a low on-resistance and low on-resistance variation with temperature, allowing it to function efficiently and reliably, even in extreme temperatures. In addition, the device features advanced total dose immunity and ESD protection, helping to keep it safe from radiation and electrostatic discharge.

The FDMC6679AZ is an excellent choice for high-frequency applications, thanks to its low on-resistance, low gate voltage, relatively high input impedance, and high reliability. It is also easy to use, as all that is required is a single input signal, making it a great choice for applications that require fast switching speeds and a low cost of ownership.

The specific data is subject to PDF, and the above content is for reference

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