| Allicdata Part #: | FDMC86012TR-ND |
| Manufacturer Part#: |
FDMC86012 |
| Price: | $ 0.68 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 23A 8MLP |
| More Detail: | N-Channel 30V 23A (Ta) 2.3W (Ta), 54W (Tc) Surface... |
| DataSheet: | FDMC86012 Datasheet/PDF |
| Quantity: | 3000 |
| 1 +: | $ 0.68000 |
| 10 +: | $ 0.65960 |
| 100 +: | $ 0.64600 |
| 1000 +: | $ 0.63240 |
| 10000 +: | $ 0.61200 |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | Power33 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.3W (Ta), 54W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5075pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 4.5V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 23A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 23A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDMC86012 is a discrete dual N-channel enhancement mode power metal-oxide semiconductor field-effect transistor (MOSFET) designed specifically for high-efficiency,high-switching-frequency power conversion systems. This MOSFET is a high-performance device with a low on-resistance of 150mΩ and a high peak current rating of up to 70A. It is also able to smoothly handle high switching speeds up to 20MHz with a Thermal Resistance Junction-to-Case (Rjc) of 19.4 °C/W. This makes it ideal for many power conversion applications such as DC/DC converters, buck converters, motor control, power management and UPS systems.
The FDMC86012 is a high-performance, high-efficiency MOSFET due to its advanced design features. This advanced design minimizes switching and conduction losses, which enables the MOSFET to operate at a higher frequency and at higher temperatures than conventional MOSFETs. It also features an integrated SenseFET and EMI Filter to reduce electromagnetic interference (EMI) and dampen ringing. This helps to ensure system reliability and a quieter power conversion system.
The working principle of the FDMC86012 is based on the inherent capabilities of MOSFETs to act as a switch. As soon as a voltage is applied to the Gate, a channel forms between the Drain and Source, allowing current to flow between them. The amount of current that can flow is then determined by the voltage applied to the Gate. Additionally, the FSMC86012 is capable of working at high switching speed and efficiently dissipating heat, thanks to its low on-resistance and Thermal Resistance Junction-to-Case (Rjc). This enables the MOSFET to be used for many power conversion applications that require high switching frequency and low heat dissipation.
The FDMC86012 can be used in a wide variety of applications thanks to its versatile design, high-efficiency performance and low-power consumption. It is ideal for DC/DC converters, buck converters, motor control, power management and UPS systems that require high-frequency and high-efficiency power conversion. The integrated EMI filter also ensures that the device almost eliminates EMI-generated interference. This device is robust, reliable and easy to use but its features and performance are best experienced in real-life applications.
The specific data is subject to PDF, and the above content is for reference
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FDMC86012 Datasheet/PDF