Allicdata Part #: | FDMC8622TR-ND |
Manufacturer Part#: |
FDMC8622 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 4A POWER33 |
More Detail: | N-Channel 100V 4A (Ta), 16A (Tc) 2.5W (Ta), 31W (T... |
DataSheet: | FDMC8622 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-MLP (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 402pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.3nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 56 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta), 16A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDMC8622 is an N-Channel, enhancement mode, high current power MOSFET. As transistors, this kind of FETs has many advantages. It has a low on-resistance, a low gate threshold voltage, excellent temperature stability and gate impedance. It is suitable forany application in which relay switching and isolation are needed. This power MOSFET is especially designed for automotive audio applications. It has a wide range of applications and is suitable for many different types of audio applications.
The FDMC8622 is used in both audio input and audio output applications. It can be used as an amplifier in both analog and digital applications. It is used as a filter in signal processing applications. It can also be used in high-frequency signal amplification applications, such as with higher frequencies. The FDMC8622 is able to provide high current switching and low power loss.
The working principle of the FDMC8622 is relatively simple. This power MOSFET is basically a voltage-controlled device, which means that when a voltage is applied between the drain and the source, the drain current is generated. The drain current is proportional to the gate voltage applied to the device. The gate-source threshold voltage Vth is the voltage at which the drain current begins to flow when a gate voltage is applied. The higher the gate-source threshold voltage, the lower the drain current. On the contrary, the lower the gate-source threshold voltage, the higher the drain current.
The FDMC8622 power MOSFET also has a controlled turn-on resistance, RDSon. This implies that the drain current is not only controlled by the gate-source threshold voltage, but also by the resistance between the drain and the source. At a lower RDSon, the total drain current will be higher; and at a higher RDSon, the total drain current will be lower. The turn-on resistance RDSon is determined by the device structure, and in this power MOSFET, it is set to 4 ohms.
The FDMC8622 is a great component for a voltage-controlled power MOSFET application. This power MOSFET has a low on-resistance, a low gate threshold voltage, and a controlled turn-on resistance, which makes it ideal for audio applications as well as in many other applications where switching and isolation are needed. It is also suitable for high-frequency signal amplification when used with higher frequencies. Furthermore, this power MOSFET is ideal for automotive audio applications, due to its excellent temperature stability and gate impedance.
The specific data is subject to PDF, and the above content is for reference
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