FDMC8651 Allicdata Electronics
Allicdata Part #:

FDMC8651TR-ND

Manufacturer Part#:

FDMC8651

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 15A POWER33
More Detail: N-Channel 30V 15A (Ta), 20A (Tc) 2.3W (Ta), 41W (T...
DataSheet: FDMC8651 datasheetFDMC8651 Datasheet/PDF
Quantity: 6000
1 +: $ 0.32000
10 +: $ 0.31040
100 +: $ 0.30400
1000 +: $ 0.29760
10000 +: $ 0.28800
Stock 6000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: Power33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3365pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 27.2nC @ 4.5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDMC8651 is an InP HEMT transistor that offers high current density, high breakdown voltage, and low noise figure for a multitude of applications in high-frequency microwave and millimeter-wave circuits. In this article, we will discuss the FDMC8651’s application fields and working principle.

The FDMC8651 is a wide-band device that is capable of operating from DC to frequencies up to 20 GHz. It is suitable for a number of medium-power RF and microwave applications, including amplifier, frequency conversion, switch, and impedance matching. The device also has low noise characteristics, making it a great option for low-noise amplifier (LNA) applications.

The FDMC8651 has a simple construction and is easy to use. It consists of an InP HEMT on an InP substrate with a gate electrode that is placed between the source and drain electrodes. It also includes a gate-drain capacitance, which improves isolation.

The working principle of the FDMC8651 is a result of the fact that the gate electrode is insulated from the channel. This allows the gate to be used for controlling the current in the channel, thus making it possible to use the device as a switch or a variable resistor. The gate can also be used to change the voltage applied to the channel, which allows for the amplification of the signal.

In addition to its use as an amplifier and switch, the FDMC8651 can also be used for impedance matching. Because the gate-drain capacitance improves isolation, the device can be used to match impedances across a wide range of frequencies.

The FDMC8651 is suitable for applications in high-power, high-frequency, and high-temperature environments. It is also reliable and has a long service life. Therefore, it is a great choice for applications that require high performance and reliability.

In conclusion, the FDMC8651 is an InP HEMT transistor that offers high current density, high breakdown voltage, and low noise figure for a multitude of applications in high-frequency microwave and millimeter-wave circuits. It can be used for a number of functions, including amplification, switching, and impedance matching. Furthermore, the device is reliable and has a long service life, making it ideal for use in high-power, high-frequency, and high-temperature environments.

The specific data is subject to PDF, and the above content is for reference

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