
Allicdata Part #: | FDMS86568-F085TR-ND |
Manufacturer Part#: |
FDMS86568-F085 |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 80A POWER56 |
More Detail: | N-Channel 60V 80A (Tc) 214W (Tj) Surface Mount Pow... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.50439 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Power56 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 214W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4335pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMS86568-F085 uses a metal-oxide-semiconductor field effect transistor (MOSFET) to regulate the flow of current when used in electronic circuits. The specific application field of this particular MOSFET is high-side switching in comparatively low power applications. While the MOSFET can be used as either a discrete component or integrated into an application specific integrated circuit (ASIC), it is most commonly used as a discrete component. The switch is able to operate at both an input and output voltage of 3.3-24 volts, and is thus suitable for low-power applications such as automotive, consumer and industrial electronics.
The MOSFET is designed in such a way that it can be easily customised for specific applications. It consists of two terminals, a gate and a source. The gate is used to control the flow of current from the source to drain, and it does this by controlling the voltage applied in the gate terminal. The lower the voltage applied to the gate terminal, the lower the current flowing from the source to drain.
The FDMS86568-F085 works on the principle of the MOSFET gate’s gate-source capacitance. This means that while the gate-source voltage (VGS) is low, the gate-source capacitance is at its highest. This results in a larger open channel between the source and drain. When a voltage is applied to the gate, the potential difference between the gate and source causes electrons to move from the source to the drain. The current flow corresponding to the applied voltage depends upon the size of the open channel created.
The FDMS86568-F085 is designed primarily for low-power applications. It employs a depletion-mode MOSFET, which means the source is tied to the lowest possible voltage before the gate voltage is applied. As a result, the MOSFET does not create a significant voltage drop in the source-drain. This makes the FDMS86568-F085 suitable for applications where low losses and a high efficiency is desired.
The FDMS86568-F085 is relatively easy to use as it can be easily tailored to the specific requirements of an application. It is also protected against transient voltage, making it suitable for use in a variety of environments. Moreover, the MOSFET is available in both a zero-voltage and an active-low configuration, making it suitable for both digital logic and analogue control.
In summary, the FDMS86568-F085 is a versatile and reliable MOSFET suitable for low-power applications. It is designed to be customised to specific applications and offers both low losses and high efficiency. The MOSFET is available in both a zero-voltage and an active-low configuration, making it suitable for both digital logic and analogue control.
The specific data is subject to PDF, and the above content is for reference
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