FDMS86320

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FDMS86320 Application Field and Working Principle

The FDMS86320 is a high-performance N-channel MOSFET (metal–oxide–semiconductor field-effect transistor) produced by Fairchild Semiconductor. The device provides low on-resistance with low gate drive requirements and fast switching speed, making it well suited for applications requiring a switched-mode power supply, power stage conversion, and motor control. In this article, we\'ll discuss the application field and operating principle of the FDMS86320.

Application Field

The FDMS86320 is suitable for switching circuits, especially for those requiring high speed and minimum on-resistance. It is designed for use in applications such as motor control, cellular telecommunication equipment, switched-mode power supplies, amplifier and output stages. The device is also suitable for automotive applications due to its performance parameters and its AEC-Q101 qualification. All these features combine to make the FDMS86320 an excellent choice for a wide range of power-switching applications.

Working Principle

The FDMS86320 is essentially composed of two N-channel MOSFETs, stacked together to form one compact device. The device operates in two switching modes: the high-side MOSFET is used for applications that require pulling the load to the supply voltage, while the low side MOSFET is used for applications that require the load to be held at a potential equal to that of the ground. In either mode, the low-side MOSFET is always on. This enables the device to realize some switch time reduction in comparison with competing solutions that require both MOSFETs to be turned on and off in order to achieve switching. The FDMS86320 is a fully-integrated device and requires no external components, thus resulting in a very efficient and cost-effective solution.

The device has an integrated on-state MOSFET drain-to-source current limit, which can be used to limit current and protect the circuits. The device also features temperature sensing, which helps to protect against excessive device temperatures by automatically switching off the FETs when the temperature exceeds the safe limit.

In addition, the device has an integrated under-voltage lockout feature that prevents the device from being switched on when the supply voltage is too low. This ensures that the proper operating conditions are maintained throughout the data transfer process.

Conclusion

The FDMS86320 is a high-performance N-Channel MOSFET that is suitable for numerous power-switching applications. It is designed for easy integration into existing systems, has low on-resistance, low gate drive requirements and fast switching speed. It also has integrated temperature sensing and under-voltage lockout features for additional protection. All these features make the FDMS86320 an excellent choice for a wide range of power-switching applications.

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