FDMS86200

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDMS86200 is a field-effect transistor developed by Fairchild Semiconductor. This type of transistor is also known as a MOSFET, short for Metal Oxide Semiconductor Field Effect Transistor. It is a single transistor, meaning it is a device that has only one active region between a source and drain. The FDMS86200 is a positive channel transistor, meaning that it is constructed with a p-type substrate and a n-type source and drain. It also utilizes an insulated gate technology to protect against damage from high voltages or currents that may be present.

The FDMS86200 is a highly reliable device suitable for a variety of application fields. This device is primarily used for applications that require low signal processing power and low on-resistance switching. Some of the main application areas in which the FDMS86200 is utilized include automotive, industrial and consumer communications, and data-acquisition systems. Additionally, the FDMS86200 is designed to have enhanced power-saving performance, allowing it to be used in systems that are exposed to high on-state resistance.

The working principle of the FDMS86200 is based on the field-effect principle. This type of transistor utilizes an electrostatic field generated by a voltage applied to the gate of the device to regulate the current flow between the source and drain. When a positive voltage is applied to the gate, a thin layer of positive charge accumulates at the surface, thus creating an electrostatic field that causes electrons to move from the source to the drain of the device, and vice versa. This mechanism is called inversion because the voltage at the gate creates an inversion layer which has the same conductivity type as the substrate. Because of this, the source and drain sides of the device are in opposite conductivity types.

Electrons flowing through the device are then able to affect the current flowing from the source to the drain. This modulation of current is what regulates the current flow. Additionally, when the gate voltage is equal to the source voltage, the current will be equal to zero. This phenomenon is known as the cutoff mode and is the result of the electric field produced by the gate voltage canceling out the electric field produced by the source voltage.

The FDMS86200 also has other specialized features such as built-in temperature compensation and thermal shutdown protection, which improve its performance and reliability. Because of its reliable performance, the FDMS86200 is a popular choice among those looking for a highly-reliable MOSFET device. Its low on-resistance and low gate-capacitance make it suitable for applications that require high switching frequencies. The FDMS86200 is a reliable and versatile device, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference