FDMS4D4N08C Allicdata Electronics
Allicdata Part #:

FDMS4D4N08C-ND

Manufacturer Part#:

FDMS4D4N08C

Price: $ 1.09
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 123A 8PQFN
More Detail: N-Channel 80V 123A (Tc) 125W (Tc) Surface Mount 8-...
DataSheet: FDMS4D4N08C datasheetFDMS4D4N08C Datasheet/PDF
Quantity: 1000
1 +: $ 1.09000
10 +: $ 1.05730
100 +: $ 1.03550
1000 +: $ 1.01370
10000 +: $ 0.98100
Stock 1000Can Ship Immediately
$ 1.09
Specifications
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6), Power56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4090pF @ 40V
Vgs (Max): ±20V
Series: PowerTrench®
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 44A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The FDMS4D4N08C transistor is a type of Field Effect Transistor (FET). FETs are an important class of transistors that are commonly used in a wide variety of applications. The FDMS4D4N08C is a single-channel FET, meaning that it has just one conducting channel that is used to control the flow of electrons between the source and the drain. This type of FET is commonly referred to as an N-channel FET.

The FDMS4D4N08C transistor has a maximum drain-source voltage of 20V and a maximum drain current of 4A. This makes it suitable for a wide range of applications such as power management, motor control, and switching. The high power rating of the transistor makes it ideal for applications that require high currents to be switched quickly and efficiently.

The FDMS4D4N08C transistor works by creating a conductive channel between its source and drain terminals. When an external voltage is applied to the gate terminal, it creates an electric field that modulates the flow of electrons between the source and the drain. The amount of current that can flow through the transistor is then controlled by the amount of voltage applied to the gate terminal.

The FDMS4D4N08C is a popular choice for many design applications due to its low resistance, high current rating, and small form factor. It is commonly used in power management and motor control circuits, where its low resistance and high current rating make it ideal for efficiently driving large loads. It is also well-suited for signal processing applications, where its small form factor allows for easy integration into small size designs.

In summary, the FDMS4D4N08C is a highly versatile FET suitable for a wide range of applications. Its high power rating and efficient switching capabilities make it ideal for applications that require high currents to be switched quickly and efficiently. Its small form factor also makes it suitable for signal processing applications, where it can easily fit into small size designs.

The specific data is subject to PDF, and the above content is for reference

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