FDS6680S

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The FDS6680S is single FET (field effect transistor) designed by Fairchild Semiconductor and the FDS6680S is part of their NexFETTM family. This type of FETs are suited for applications in an wide range of electronic equipments such as automotive, industrial and home digital electronics. As a power MOSFET, the FDS6680S provides high performance, reliability and an advanced level of integration, and is suited for multiple power applications.

The FDS6680S features a low on-resistance R_DS(ON) which allows for significant power savings and improved power efficiency in a variety of systems. This feature provides a wide range of design flexibility and makes the FDS6680S a valuable tool for power conversion and power efficiency. The FDS6680S also features an on-resistance nearly constant over the full temp range of -40°C to 125°C.

The FDS6680S offers several advantages for both system and circuit designers. As a single device, it has the ability to replace two or three elements in a circuit. This saves board space and reduces the complexity and cost of the overall system. Additionally, the FDS6680S has very low intrinsic capacitance, making it ideal for high speed applications with no distortion to the circuit. The low drain-source capacitance also helps reduce power consumption and increase system efficiency.

The FDS6680S is well-suited for many applications due to its wide V_DS range and its very low R_DS(ON) capability. This makes it ideal for power supply design, as well as for other power-related applications. It can be used in classes of power supplies, including switched-mode power supplies, DC/DC Converters, motor drivers and semi-conductor relays.

The working principle of the FDS6680S is the same as for any other FET device, which follows the basics of semiconductor physics. When an electric field is applied across the gate-to-source junction of the FDS6680S, it allows current to pass through the device. This is due to the electric field "pulling" the electrons from the source to the drain, forming an inversion layer within the FET. This inversion layer then controls the amount of current that is allowed through the device, providing a variable resistance between the source and drain.

The FDS6680S is designed to enhance the power efficiency and push power conversion performance limits. By providing robustness and low thermal impedance, the FDS6680S is a valuable device for power conversion and improved power efficiency.

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