FDS6699S

Vgs(th) (Max) @ Id:	3V @ 1mA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3610pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	91nC @ 10V
Series:	PowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs:	3.6 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	21A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

FDS6699S is a single metal-oxide semiconductor field-effect transistor (MOSFET) designed and manufactured by Fairchild Semiconductor. It is a high voltage, high current rated device capable of switching up to 75mΩ with a status drain source on resistance RDS(on) of up to 8.7 Amps. This makes it an ideal choice for power conversion applications or where the MOSFET needs to handle high voltages.

Application fields

FDS6699S is a great choice for applications requiring a high voltage and high current MOSFET. It has built-in blocking capabilities, which allow it to be used in a variety of different applications. Examples of application fields for this MOSFET include:•DC/DC converters: FDS6699S is capable of switching up to 75mΩ with an RDS(on) of up to 8.7A and can be used in DC/DC converter applications.•Power Switching: Due to its high voltage and current capabilities, the FDS6699S is suitable for power switching applications.•High voltage switching: The high blocking capabilities of this MOSFET make it suitable for use in high voltage switching applications.•High voltage sensing: The high voltage capabilities of the FDS6699S allow it to be used as a high voltage sensing device.

Working principle

The working principle of a MOSFET is relatively simple. It is composed of four major elements: source, drain, gate, and substrate. A voltage applied to the gate creates an electric field that attracts charge carriers. This in turn creates an inversion layer between the source and drain, allowing the charge carriers to flow from the source to the drain. The size of the inversion layer is determined by the gate voltage. The FDS6699S MOSFET works on this same principle. Its input voltage creates an electric field that attracts charge carriers through the Drain Source structure. The charge carriers then move from Source to Drain, causing a drain to source current to flow. This current can be controlled by varying the signal voltage at the Gate input. In addition to being a great choice for power conversion applications, FDS6699S can also be used in high voltage switching applications due to its high voltage capabilities. Its high blocking capabilities make it ideal for high voltage switching implementations.

Conclusion

FDS6699S is a single MOSFET from Fairchild Semiconductor. It is capable of switching up to 75mΩ with a status drain source on resistance RDS(on) of up to 8.7 Amps. Additionally, its blocking capabilities enable it to be used in a variety of applications such as power switching, DC/DC converters, high voltage sensing and high voltage switching. The working principle of this MOSFET is based on a gate voltage creating an electrical field that attracts charge carriers from the Source to the Drain, allowing current to flow.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description