FDS6670A Allicdata Electronics
Allicdata Part #:

FDS6670ATR-ND

Manufacturer Part#:

FDS6670A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 13A 8-SOIC
More Detail: N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: FDS6670A datasheetFDS6670A Datasheet/PDF
Quantity: 22500
Stock 22500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDS6670A is an advanced single-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with features that make it suitable for a wide range of applications. It is capable of operating at voltage levels from 6 to 80 volts, making it ideal for use in high voltage applications. Its high current rating of 25 amps makes it suitable for use in power management, motor control, and generator control systems. Additionally, it is able to withstand temperatures of up to 150°C, making it suitable for use in extreme environments.

The FDS6670A is used in switching and amplifier circuits. In switching circuits, the device is used to turn on and off electrical current, enabling the flow of power through the circuit when desired. In amplifier circuits, the device is used to amplify the voltage and current of the signal. This allows it to be used in power management, motor control, and generator control systems.

The FDS6670A works by changing the resistance of a channel of the device by changing the voltage of the control gate. The resistance of the channel is directly proportional to the voltage applied to the control gate: the higher the voltage on the control gate, the lower the resistance of the channel. When a voltage above the threshold voltage is applied to the control gate, the resistance of the channel is decreased, allowing current to flow through the device. The current is then proportional to the voltage on the control gate.

The FDS6670A features a low drain-source on-resistance of 0.1Ω-0.3Ω, and a low gate charge of 0.3nC. This means that the device can be used to switch current quickly, and with minimal power consumption. Additionally, it has a stable temperature, meaning that its performance will remain consistent over varying operating conditions. This makes it suitable for use in applications where high efficiency is important.

The FDS6670A features a fast switching speed, making it suitable for use in high frequency applications. Additionally, it has a low gate-source capacitance, which can further reduce noise and switching losses in high frequency applications. As a result, it can be used to create high-performance integrated circuits.

In addition to its many advantages, the FDS6670A also offers excellent thermal stability, making it suitable for use in high power applications. It also has low leakage current, meaning that it can be used in applications that require extremely low power consumption. Finally, the device is compatible with lead-free solders, making it suitable for use in lead-free soldering processes.

The FDS6670A is an ideal solution for many applications, including motor control and generators, power management systems, and high-frequency switching circuits. Its numerous features, combined with its excellent performance, make it an ideal choice for use in modern electronic applications. As such, it is an ideal solution for designers looking for an advanced MOSFET device that can provide reliable and efficient performance in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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