Allicdata Part #: | FDS6894AZ-ND |
Manufacturer Part#: |
FDS6894AZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 8A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 8A 900mW Surfa... |
DataSheet: | FDS6894AZ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 8A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1455pF @ 10V |
Power - Max: | 900mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The FDS6894AZ features a built-in gate driver and a high-side precharge circuit. These features enable the FDS6894AZ array to source/sink up to 10A of current and to drive up to 10ns of gate charge in a wide variety of topologies. The array also includes an integrated protector circuit, which provides protection against over-temperature, current over-limit and short-circuit conditions. These features ensure reliable operation in a wide range of operating conditions.
The FDS6894AZ array can be used in either single-ended or differential applications. In a single-ended application, the FDS6894AZ array can be configured as either a normally-on configuration or a normally-off configuration. In a differential configuration, the FDS6894AZ array can be used to drive either two n-channel or two p-channel MOSFETs.
The FDS6894AZ array works by utilizing a pair of n-channel field-effect transistors (NMOSFETs) to control the voltage and current in a transistor array. The NMOSFETs are controlled by an input gate, which is connected to a power source. By changing the voltage at the gate, an exponentially increasing or decreasing current is produced in the array. This current is used to control the voltage and current in the output devices.
The FDS6894AZ array is an excellent choice for applications requiring low on-resistance, high speed switching, high gate charge and low gate-to-drain leakage current. It is suitable for a wide variety of applications including power management control, automotive, telecom, and industrial processing. The integrated protector circuit ensures reliable operation in a wide range of operating conditions and the precharge circuit enables the FDS6894AZ array to handle up to 10A of current and to drive up to 10ns of gate charge in a wide variety of topologies.
The specific data is subject to PDF, and the above content is for reference
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