FDS6990A Allicdata Electronics
Allicdata Part #:

FDS6990ATR-ND

Manufacturer Part#:

FDS6990A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 30V 7.5A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 7.5A 900mW Sur...
DataSheet: FDS6990A datasheetFDS6990A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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FDS6990A Application Field and Working Principle

FDS6990A is an N-channel Enhanced Crack Free (ECF) Plastic-Encapsulated MOSFET Array that provides superior performance and reliability for medium, low and ultra-low voltage power switching applications. It consists of two independent FETs, each featuring two sources and a single drain which allows for very low each combined “ON-Resistance”. It has an extended temperature range and wide range of gate capabilities ranging from -1V to -20V.

Application Fields

FDS6990A can be used in a wide range of applications, such as power management, consumer appliances, and general purpose switching. With a low on-resistance of 0.067ohms and an extended temperature range of -40°C to +125°C, it is suitable for industrial and commercial applications. It is also compatible with a 3.3V to 5.5V logic VCC range, allowing for a wide range of gate control voltages. Furthermore, PWM and logic level inputs are available for more precise control.

FDS6990A’s ECF technology ensures superior temperature stability, superior total package reliability and superior avalanche performance. It is also designed to enable accurate current monitoring for improved load line control and load protection, as well as providing noise immunity.

Working Principle

The FDS6990A contains a pair of N-channel Enhanced Crack Free plastic-encapsulated MOSFETs, each with two sources and a single drain. When the gate voltage of both FETs is sufficiently large negative, the FETs are turned “ON” and current begins to flow from the sources to the drain.

The FETs are individually connected to the drain through an internal resistor. When the FETs are turned “OFF”, the internal resistor helps to reduce the body diode forward current.

The FDS6990A is designed with a low-side source FET, making it ideal for high/low side switching. This feature helps to reduce parts complexity and cost.

Conclusion

FDS6990A is a high-speed, high-efficiency, low on-resistance N-channel ECF Plastic-Encapsulated MOSFET Array designed for medium, low and ultra-low voltage power switching applications. Its wide temperature range and gate capabilities ranging from -1 V to -20 V make it ideal for industrial and commercial applications.

Its ECF technology ensures superior temperature stability and superior total package reliability, while its integrated resistors provide improved current monitoring, load line control, noise immunity and load protection.

The specific data is subject to PDF, and the above content is for reference

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