FQD10N20LTM Discrete Semiconductor Products

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The FQD10N20LTM is a Quickfet N-Channel Enhancement Mode MOSFET (Metal-Oxide-Silicon Field-Effect Transistor). This wide range MOSFET provides superior switching performance ideal for high current switch applications and has low voltage operation.

The FQD10N20LTM is designed for applications with operating temperature range from -55℃ to 150℃. It is available in TO-220AB and TO-220LP packages with superior thermal characteristics and low on-resistance.

The FQD10N20LTM has the typical RDS(on) of 10 mΩ maximum, the typical ID of 10A and maximum VDS of 20V. It is designed for low gate charge Qg, fast switching speed and improved system performance. Its ultra-low gate charge Qg provides fast switching and easy paralleling.

The FQD10N20LTM is ideal for high side switch applications such as UPS, power converters, power supply, ac-dc and dc-dc conversion, motor control and SMPS (Switched-Mode Power Supply). It can also be used in low offset linear regulator.

Application Field

The FQD10N20LTM has wide applications in consumer electronics, AC-DC and DC-DC conversions and industrial motor control. It is used as a high current switch in consumer electronics such as cell phones, portable audio equipment, battery doctor, and other consumer electronics. It is also used in various power switching applications

Working Principle

MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor) operate on a very simple principle, but their application is often quite complicated. The FQD10N20LTM works on the principle of electrostatic control of the flow of electrons through an insulated-gate MOSFET. The insulated-gate is an essential component in this type of transistor, as it allows current to flow only when voltage is applied to this gate. When an electric field is applied to an n-type MOSFET, the electrons in the n-channel are repelled and will drift away from the gate. This causes a decrease in the depletion layer\'s width, allowing for current to flow through the device. When voltage is removed from the gate, the electrons will drift back to the gate and the depletion layer\'s width will increase, thus cutting off the current.

The FQD10N20LTM is an Enhancement mode MOSFET. This means that the application of a positive voltage on the gate of this transistor is necessary for it to conduct. This is opposed to Depletion mode MOSFETS, which have a positive voltage on the gate to switch off the conduction.

To turn on a MOSFET, a gate voltage lower than the drain voltage must be applied, making the transistor a voltage-controlled device. The FQD10N20LTM has low gate charge of 10mV max., allowing for faster switching compared to other power MOSFETs. It also has low resistance, which makes it ideal for high current switching applications. And with its high thermal resistance and low power loss capabilities, the FQDL010N20LTM can operate in the most demanding power switching applications.

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