Allicdata Part #: | FQD10N20TF-ND |
Manufacturer Part#: |
FQD10N20TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 7.6A DPAK |
More Detail: | N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surfa... |
DataSheet: | FQD10N20TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 51W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQD10N20TF is a first-level choice in high-power field-effect transistors(FETs). It has a very wide range of application and working principle.
FETs, or Field Effect Transistors, are unipolar transistors that uses a gate voltage to control the flow of current between the source and drain. They are widely used in many applications such as power amplifiers, switches, converters, amplifiers and inverters. The FQD10N20TF is a 200V N-Channel Power MOSFET, designed for high voltage applications. It has a maximum operating voltage of 200V and a peak output current of 20A.
The working principle of the FQD10N20TF is based on the principle of electrostatic interaction. As the gate voltage is increased, the amount of electrostatic force between the gate and the source increases. This causes the channel to expand and more electrons to flow from the source to the drain. The increase in gate voltage also increases the transconductance, or the resistance across the channel. This change in resistance affects the amount of current that can flow through the channel.
The FQD10N20TF is can be used in linear voltage regulator, power amplifier, inverter and switch applications. For linear voltage regulation, the current flow can be controlled by adjusting the gate voltage. This ensures that the output voltage of the regulator is maintained accurately and reliably. In power amplifiers, the FET is used to amplify the input signal from the microphone or instrument to the output loudspeaker. In inverters, it is used to convert DC to AC power. In switch applications, the FET is used to control the flow of high-power currents.
The FQD10N20TF is also used in a variety of consumer electronics, such as TV sets, laptops, and smartphones. In these devices, the FET is used to reduce the voltage drop across the circuit and improve energy efficiency. It also helps to protect sensitive components, such as the display and power management unit, from damage due to voltage spikes.
Overall, the FQD10N20TF is a highly reliable, stable, and efficient power FET with a wide range of applications. It is a great choice for high-power linear voltage regulation, power amplification, inverter, and switch applications.
The specific data is subject to PDF, and the above content is for reference
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