Allicdata Part #: | FQD1N50TF-ND |
Manufacturer Part#: |
FQD1N50TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 1.1A DPAK |
More Detail: | N-Channel 500V 1.1A (Tc) 2.5W (Ta), 25W (Tc) Surfa... |
DataSheet: | FQD1N50TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 9 Ohm @ 550mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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A FQD1N50TF is a field-effect (FET) transistor that has a single drain and two gates. It is commonly used in applications that require precision control of circuit parameters because it is a excellent voltage and temperature sensor that can maintain accuracy over a wide operating temperature range. The FQD1N50TF is commonly used in consumer, automotive, industrial, and telecommunications applications.
FET transistors are a type of field-effect transistor that uses an electric field to control an electric current. FET transistors have a number of advantages over traditional bipolar transistors, including lower power requirements and higher input impedance. In a FET transistor, a voltage applied to the gate terminal controls the current flow between the drain and source terminals, allowing the device to operate as a switch or amplifier.
The FQD1N50TF is a N-channel FET transistor, meaning it can only conduct current flow when a signal is applied to its gate terminal. The FQD1N50TF has a drain-source breakdown voltage of 500 volts, meaning it can tolerate a high voltage before its gate terminal is activated and current starts flowing through the transistor. The FQD1N50TF also has a maximum drain current of 3 amps, so it can handle a large amount of current flow. It has a gate threshold voltage of 4 volts, so a 4-volt signal is the minimum required to activate the transistor and start current flow.
The FQD1N50TF has a number of applications, such as power conversion, motor control, and power switching. In power conversion, the FQD1N50TF is used to convert AC power to DC power. This is done with a switch-mode power supply, which uses FET transistors to rapidly switch the voltage applied to the load. In motor control, the FQD1N50TF is used to control the speed and direction of a motor by controlling the amount of current it is supplied. In power switching, the FQD1N50TF can be used in power circuits to turn components on and off, such as an LED or a relay.
The FQD1N50TF is a reliable, rugged FET transistor that is capable of withstanding high voltage, high temperature, and high current spikes. It is an excellent voltage and temperature sensor that can maintain accuracy over a wide temperature range. The FQD1N50TF is a great choice for a variety of applications, including power conversion, motor control, and power switching.
The specific data is subject to PDF, and the above content is for reference
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