FQD13N10TF Allicdata Electronics
Allicdata Part #:

FQD13N10TF-ND

Manufacturer Part#:

FQD13N10TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 10A DPAK
More Detail: N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surfac...
DataSheet: FQD13N10TF datasheetFQD13N10TF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 180 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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FQD13N10TF is a type of insulated field effect transistor (FET) with a wide variety of usage models. It is produced by International Rectifier and is a silicon-based device. This type of transistor is also referred to as an MOSFET, or a metal oxide semiconductor field effect transistor.

The FQD13N10TF primarily utilizes enhancement-mode technology, which is a higher-efficiency technique than depletion-mode techniques, and uses a voltage signal to control the current flowing through the component. This signal causes a capacitance change which is measured and used to regulate current and voltage levels, consequently making the transistor great for efficient power controlling applications.

The FQD13N10TF also has a very low gate threshold voltage, or VGS(th), and low gate charge, which makes it suitable for applications that require low gate drive power and high efficiency power control. Achieving excellent static and dynamic switching performance, the device makes an ideal choice for applications such as DC-DC converters, synchronous rectifiers and motor control.

The FQD13N10TF is optimized for surface-mount power applications. It features a wide range of gate charge levels, maximum drain current and voltage of 10A and 100V, with an on resistance ranging from 25mΩ to 175mΩ. This positive temperature coefficient and 100V drain source voltage makes it suitable for many power control systems.

When operating, the FQD13N10TF requires a bias voltage at the gate of about 7V. Generally, this transistor is turned on only when the gate voltage is higher than that of the drain, and it stays off when the voltage is lower. When a voltage greater than 7V is observed between the gate and the drain, electrons flood the gate, causing the FQD13N10TF to become conductive. As a result, current can flow from the drain to the source and the device can be used in applications such as power control, motor control and DC-DC converters.

A good example of a practical application of the FQD13N10TF is in power supply solutions that require maximum efficiency. For example, in a system controlled by a DC-DC converter, the FQD13N10TF can be used to convert a low input voltage to a higher output voltage with minimal power loss. It is also a great option for synchronous rectifiers, where it is used to reduce power loss and increase efficiency in switching power supplies. It is also a great choice for motor control, as it can be used to efficiently control current and voltage levels for a variety of motors.

In summary, the FQD13N10TF is an efficient, reliable and versatile device which is suitable for many applications. Its low gate threshold voltage and low gate charge are well suited for applications involving low gate drive power and high efficiency power control. It is suitable for power supply solutions requiring maximum efficiency, and it can be used to regulate current and voltage levels in DC-DC converters, synchronous rectifiers and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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