Allicdata Part #: | FQD13N10TF-ND |
Manufacturer Part#: |
FQD13N10TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 10A DPAK |
More Detail: | N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surfac... |
DataSheet: | FQD13N10TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FQD13N10TF is a type of insulated field effect transistor (FET) with a wide variety of usage models. It is produced by International Rectifier and is a silicon-based device. This type of transistor is also referred to as an MOSFET, or a metal oxide semiconductor field effect transistor.
The FQD13N10TF primarily utilizes enhancement-mode technology, which is a higher-efficiency technique than depletion-mode techniques, and uses a voltage signal to control the current flowing through the component. This signal causes a capacitance change which is measured and used to regulate current and voltage levels, consequently making the transistor great for efficient power controlling applications.
The FQD13N10TF also has a very low gate threshold voltage, or VGS(th), and low gate charge, which makes it suitable for applications that require low gate drive power and high efficiency power control. Achieving excellent static and dynamic switching performance, the device makes an ideal choice for applications such as DC-DC converters, synchronous rectifiers and motor control.
The FQD13N10TF is optimized for surface-mount power applications. It features a wide range of gate charge levels, maximum drain current and voltage of 10A and 100V, with an on resistance ranging from 25mΩ to 175mΩ. This positive temperature coefficient and 100V drain source voltage makes it suitable for many power control systems.
When operating, the FQD13N10TF requires a bias voltage at the gate of about 7V. Generally, this transistor is turned on only when the gate voltage is higher than that of the drain, and it stays off when the voltage is lower. When a voltage greater than 7V is observed between the gate and the drain, electrons flood the gate, causing the FQD13N10TF to become conductive. As a result, current can flow from the drain to the source and the device can be used in applications such as power control, motor control and DC-DC converters.
A good example of a practical application of the FQD13N10TF is in power supply solutions that require maximum efficiency. For example, in a system controlled by a DC-DC converter, the FQD13N10TF can be used to convert a low input voltage to a higher output voltage with minimal power loss. It is also a great option for synchronous rectifiers, where it is used to reduce power loss and increase efficiency in switching power supplies. It is also a great choice for motor control, as it can be used to efficiently control current and voltage levels for a variety of motors.
In summary, the FQD13N10TF is an efficient, reliable and versatile device which is suitable for many applications. Its low gate threshold voltage and low gate charge are well suited for applications involving low gate drive power and high efficiency power control. It is suitable for power supply solutions requiring maximum efficiency, and it can be used to regulate current and voltage levels in DC-DC converters, synchronous rectifiers and motor control applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQD13N10LTM_NBEL001 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 10A DPAK... |
FQD10N20CTM_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 7.8A DPA... |
FQD12N20TM_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 9A DPAKN... |
FQD16N25CTM_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 250V 16A DPAK... |
FQD19N10TM_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 15.6A DP... |
FQD17P06TF | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 12A DPAKP... |
FQD13N06LTF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 11A DPAKN... |
FQD1N50TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 1.1A DPA... |
FQD1N50TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 1.1A DPA... |
FQD1N60CTF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 1A DPAKN... |
FQD10N20CTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 7.8A DPA... |
FQD13N10TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 10A DPAK... |
FQD13N10LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 10A DPAK... |
FQD1N80TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 800V 1A DPAKN... |
FQD1N60TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 1A DPAKN... |
FQD1P50TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 500V 1.2A DPA... |
FQD1P50TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 500V 1.2A DPA... |
FQD13N06TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 10A DPAKN... |
FQD1N60TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 1A DPAKN... |
FQD17N08LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 12.9A DPA... |
FQD10N20LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 7.6A DPA... |
FQD19N10LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 15.6A DP... |
FQD11P06TF | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 9.4A DPAK... |
FQD12P10TF | ON Semicondu... | -- | 1000 | MOSFET P-CH 100V 9.4A DPA... |
FQD12P10TM | ON Semicondu... | -- | 1000 | MOSFET P-CH 100V 9.4A DPA... |
FQD19N10TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 15.6A DP... |
FQD14N15TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 150V 10A DPAK... |
FQD12N20LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 9A DPAKN... |
FQD12N20TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 9A DPAKN... |
FQD10N20TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 7.6A DPA... |
FQD10N20TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 7.6A DPA... |
FQD16N15TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 150V 11.8A DP... |
FQD16N15TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 150V 11.8A DP... |
FQD18N20V2TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 15A DPAK... |
FQD12N20LTM_SN00173 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V DPAKN-Ch... |
FQD13N10LTM | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 10A DPAK... |
FQD17P06TM | ON Semicondu... | -- | 2500 | MOSFET P-CH 60V 12A DPAKP... |
FQD18N20V2TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 15A DPAK... |
FQD12N20TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 9A DPAKN... |
FQD19N10TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 15.6A DP... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...