Allicdata Part #: | FQD10N20TM-ND |
Manufacturer Part#: |
FQD10N20TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 7.6A DPAK |
More Detail: | N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surfa... |
DataSheet: | FQD10N20TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 51W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQD10N20TM is a type of metal-oxide-semiconductor filed-effect transistor (MOSFET) that belongs to the single category. The FQD10N20TM is best known for its high speed, low saturation voltage, low on-resistance. This makes it a suitable option for use in situations where power loss due to MOSFET on-resistance is critical.
The FQD10N20TM is a three-terminal device with an n-channel enhancement-mode structure. The three terminals are gate, drain, and source. The gate is used to control the device, while the source and drain are used to carry the current. The device works in such a way that when a voltage is applied to the gate, a field-effect is created, which results in a change in the resistance of the device from being infinite (off) to low (on). This change in resistance is what allows the device to be used in various applications.
FQD10N20TM is mainly used in switching applications where high speed, low on-resistance, and low saturation voltage are important. It is often used for applications such as high-speed switching power supplies, high power switching, and power control. It can also be used for applications such as motor control, DC-DC converters, and rectifier bridges.
The FQD10N20TM works by taking advantage of the transistor\'s field-effect mechanism, which is a key part of the MOSFET structure. When a voltage is applied to the gate of the FQD10N20TM, the electrons in the channel between the gate and the source are repelled, creating a region of low resistance. This low resistance allows current to flow through the device, making it an effective switch. The FQD10N20TM is best suited for use in applications where fast switching speed and low power loss are needed.
The FQD10N20TM is a popular choice for many applications due to its high speed, low on-resistance, and low saturation voltage. It is also relatively inexpensive and has a large current handling capacity. It is also temperature stable, making it suitable for use in various environments. This makes it a great choice for many different applications including power control, motor control, DC-DC converters, and rectifier bridges.
In conclusion, the FQD10N20TM is a popular choice for a wide variety of applications where high speed, low on-resistance, and low saturation voltage are key factors. It is relatively inexpensive and has a large current handling capacity and is temperature stable. This makes it suitable for many different applications and is an excellent choice for power control, motor control, DC-DC converters, and rectifier bridges. With its low on-resistance, high speed and low saturation voltage, the FQD10N20TM is an ideal choice for many different applications requiring fast switching and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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