Allicdata Part #: | FQD16N25CTM_F080-ND |
Manufacturer Part#: |
FQD16N25CTM_F080 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 16A DPAK |
More Detail: | N-Channel 250V 16A (Tc) 160W (Tc) Surface Mount D-... |
DataSheet: | FQD16N25CTM_F080 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 53.5nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1080pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 160W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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FQD16N25CTM_F080 Application Field and Working Principle
FQD16N25CTM_F080 is a field-effect transistor (FET) that is part of thousands of single type metal-oxide-semiconductor FETs (MOSFETs) available in the market today. This product is manufactured by Fairchild Semiconductor Corporation in the form of a rectangular component with 3-pins, having 2 for the source and drain terminals and 1 for the gate terminal. It is made with advanced silicon technology and has an 8 V drain-source breakdown voltage with a 0.16 Ohm maximum drain-source on-resistance (RDS (on)). Its nominal drain current (ID) is 16 A. This FET is particularly designed to be used in negative feedback power supply-regulated power supplies, AC-DC converters and DC-DC converters operating in the circuit of low-voltage equipment.
In its basic operation, FQD16N25CTM_F080 works as an electronic switch. When the gate terminal is kept on a negative potential, the MOSFET acts as an open switch thus not allowing any current flow from the source to the drain. This is because it is made up of an insulated gate which does not permit electron flow. When the gate terminal is put on a positive potential, the current is allowed to flow from the source to the drain terminal of the FET. The amount of current flowing through is determined by the ability of the gate terminal to control the flow of electrons.
This MOSFET is fundamentally designed with a low RDS (on) thus making it a desirable FET type for creating power controlled designs. Due to this fundamental characteristic it provides higher efficiency in a given circuit and is capable of switching faster. In addition, FQD16N25CTM_F080 also shows superior thermal characteristics, meaning that it can handle increased power dissipation and keep the temperature rise of the applied circuits and components at a very low level.
This product is mainly used in power controlled circuits, power supply application, audio amplifiers, telecommunication equipment and computer peripheral devices. As a result, this MOSFET is being used in applications such as voltage regulators, current sense amplifiers, commercial power applications, etc. As the current rating of this FET is high, it is suitable for controlling high power applications and for incandescent lamp control.
In short, the FQD16N25CTM_F080 MOSFET is a reliable FET that can be used in a variety of applications due to its various features. Its low RDS (on) and high current rating, as well as its superior thermal characteristics, make it a desirable solution for many applications involving power control.
The specific data is subject to PDF, and the above content is for reference
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