Allicdata Part #: | FQD19N10TMTR-ND |
Manufacturer Part#: |
FQD19N10TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 15.6A DPAK |
More Detail: | N-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surf... |
DataSheet: | FQD19N10TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 7.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15.6A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FQD19N10TM is a type of MOSFET transistor that is used in a wide range of applications. This type of transistor is a single, state-of-the-art, N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) and is designed to provide high-speed switching, reliable operation, and low on-resistance. As such, it is used in a wide range of digital and analog circuits.
MOSFET transistors have a variety of uses due to their ability to act as both an amplifier and an electronic switch. They are predominantly used in power supply applications, as they are capable of regulating the electrical current in order to maintain the power supply’s desired output. Additionally, because of their wide range of uses, MOSFETs can be used for various applications such as amplifying circuits, sensor circuits, semiconductor relays, and audio output circuits.
The FQD19N10TM is a state-of-the-art N-channel MOSFET which is designed for use in a variety of applications such as audio output circuits and semiconductor relays. In addition to its low on-resistance, this part features a low drain-source saturation voltage and lower gate charge than other competitors in its range. This means that the FQD19N10TM is capable of providing both high-speed switching and low on-resistance. Its applications are also well suited for motor control and high-power switching.
The FQD19N10TM works on a simple principle – by using an electric field, electronic current is able to flow through a material (semiconductor), in this case the MOSFET. The transistor is activated by applying a voltage to the gate terminal, which causes the electric field to be created, allowing current to flow. When the gate terminal is not being activated, the electric field dissipates and the transistor is no longer able to conduct current. This on-off ability makes the FQD19N10TM ideal for use as an electronic switch in high-power applications.
The FQD19N10TM is used in a wide variety of applications because of its ability to provide high-speed switching, low on-resistance, and reliable operation. It is used in power supply applications and motor control, as well as audio output circuits and low power switching applications. This makes it an ideal choice for high-power and low-power applications.
In summary, the FQD19N10TM is a state-of-the-art single N-channel MOSFET designed to provide reliable operation and low on-resistance. It is used in a wide variety of applications due to its ability to provide high-speed switching and reliable operation. It is an ideal choice for power supply applications, motor control, audio output circuits, and low power switching applications. With its low drain-source saturation voltage, low gate charge, and high speed switching, the FQD19N10TM is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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