| Allicdata Part #: | FQD18N20V2TF-ND |
| Manufacturer Part#: |
FQD18N20V2TF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 15A DPAK |
| More Detail: | N-Channel 200V 15A (Tc) 2.5W (Ta), 83W (Tc) Surfac... |
| DataSheet: |  FQD18N20V2TF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1080pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 140 mOhm @ 7.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The FQD18N20V2TF is a small surface mount N-Channel MOSFET designed for power switching and control applications. It is a higher voltage version of the FQD18N20V2 with similar characteristics. The device is well suited for high power switching applications such as DC to DC conversion, motor control, and high-side load switch. The FET can switch the voltage between 50 and 400 volts with a maximum current rating of 18A. It also has excellent protection and over-temperature protection features built into the device.
The device is manufactured using an advanced high-voltage MOSFET process. It is built using an N-Channel Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) with a gate oxide of 150nm. The high-voltage process ensures that the device can effectively handle higher voltages and cope with high frequency switching. Additionally, the device has a low gate charge and low on-resistance, allowing it to efficiently switch the voltage. The device is ideal for switching the voltage at frequencies up to 1 MHz.
The FQD18N20V2TF has several features that make it an ideal choice for power switching and control applications. The built-in over-temperature protection helps prevent devices from overheating and prolongs their service life. Additionally, the device supports creepage, which helps protect sensitive circuits from electrical stability issues. Finally, the device has a high operating temperature range of -40 to +150°C, allowing it to be used in high-temperature environments.
The FQD18N20V2TF can be used in a variety of power switching and control applications. It is ideal for DC to DC conversion, motor control, high-side load switching, and other higher power switching applications. The device can also be used as a high-side switch in battery-powered applications such as medical and automotive systems. Finally, the device can be used as a high-side switch for digital signaling applications.
In conclusion, the FQD18N20V2TF is a high voltage N-Channel MOSFET suitable for power switching and control applications. It is designed for high power switching applications such as DC to DC conversion, motor control, and high-side load switches. The device features built-in over-temperature protection and creepage protection, making it an ideal choice for high-temperature and sensitive circuits. The device can be used in a variety of power switching and control applications, such as DC to DC conversion, motor control, and high-side load switching. Finally, the device can also be used as a high-side switch for digital signaling applications. With its high voltage and wide operating temperature range, the FQD18N20V2TF is an ideal choice for higher power switching and control applications.
The specific data is subject to PDF, and the above content is for reference
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