FQD12N20LTF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 55W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1080pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	21nC @ 5V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	280 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Bulk

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FQD12N20LTF is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It features an N-channel enhancement mode type, low drain source voltage (VDSS) of 20V, a drain current (ID) of 12A and a drain source on resistance (RDSon) of just 0.56Ω. FQD12N20LTF is specifically designed for high-frequency power supply, DC-DC converter and in other switching applications.The FQD12N20LTF is designed to operate with a low drain source voltage so that power losses are minimal and energy efficiency is maximized. It has an excellent thermal resistance making it ideal for high-power applications. The low on-state resistance of just 0.56Ω reduces conduction losses and improves efficiency.The FQD12N20LTF also has low input capacitance and output capacitance, making it suitable for switching applications. It also has an integrated charge pump circuit which allows for auto-restoring in the OFF and ON states and improves device life. The FQD12N20LTF has low total gate charge and excellent frequency performance.The FQD12N20LTF is classified into two broad categories of operation: enhancement mode and depletion mode. In enhancement mode operation, a positive voltage is required to turn the device on. In depletion mode operation, the device can be turned on by either a positive or a negative voltage.The FQD12N20LTF is ideal for high-power applications in which the device must be able to handle large currents. It is also suitable for switching applications because of its low input capacitance and output capacitance.The FQD12N20LTF works on an N-channel enhancement mode. This means that when a positive voltage is applied to the gate, a channel is activated between the source and drain regions. This channel allows current to flow from the source to the drain and as a result, voltage can be regulated and energy can be efficiently preserved.The FQD12N20LTF is used in various applications including grid-tied solar systems and Uninterruptible Power Supplies (UPS) systems. It is also used in high-power DC-DC converters, high-frequency power supplies, and switching applicators such as switching power supplies and AC-DC converters. The FQD12N20LTF is also suitable for automotive and industrial applications.In conclusion, the FQD12N20LTF is an excellent choice for high-power applications and in switching applications, due to its low on-state resistance and operational temperature range. Its excellent thermal resistance makes it ideal for high-power applications, while its low total gate charge and excellent frequency performance make it suitable for switching applications. It has an integrated charge pump circuit which helps to improve device life and minimize power loss. The FQD12N20LTF is ideal for a wide range of applications in the automotive, industrial and grid-tied solar systems.

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