Allicdata Part #: | FQD14N15TM-ND |
Manufacturer Part#: |
FQD14N15TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 10A DPAK |
More Detail: | N-Channel 150V 10A (Tc) 2.5W (Ta), 50W (Tc) Surfac... |
DataSheet: | FQD14N15TM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 715pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 210 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQD14N15TM is a common field-effect transistor (FET) applied in a variety of commercial and industrial applications. It is a static, unipolar semiconductor device which can be found in circuits where high input impedances and low output impedances need to be maintained. It is also useful for converting a low voltage signal into a high voltage signal. The FQD14N15TM is primarily a N-Channel MOSFET (metal–oxide–semiconductor field-effect transistor) and is often used in audio applications, radio frequency (RF) signal amplification and power supply switching.
The FQD14N15TM has a few important characteristics: its drain-source resistance (RDS) is 14 ohms and its total gate charge (QG) is 15 nC (picocoulombs). The FQD14N15TM’s drain-source voltage (VGS) is 12 volts and its gate-source voltage (VDS) is 10 volts. The FQD14N15TM also has a maximum drain current (IDM) of 3 A (amps) and a gate-source voltage drop (VDR) of 2V.
The basic operating principle behind a FQD14N15TM FET is that it acts as a switch. To turn the FET on and allow current to flow through it, you must apply a lower voltage to the gate than is present at the source. When the gate voltage is higher than the source voltage, the FET turns off and no current can flow. This allows the FET to act as an adjustable resistor, allowing the user to vary the amount of current flowing through the transistor using a relatively low voltage.
One of the most common uses of a N-channel FET is as a power supply switch. This is done by connecting the drain and source between the load and the power supply, and then connecting the gate to a voltage that is lower than the voltage of the power supply. When the voltage at the gate is lower than the voltage at the power supply, the FET turns on, allowing current to flow through it, thus switching the power supply on. As the voltage at the gate increases, the FET turns off, disconnecting the power supply from the load.
The FQD14N15TM is a popular choice for many electronic device applications due to its low power requirements, low resistance, and low voltage drop. It can be used for switching power supplies, amplifying RF signal signals, and general purpose current reductions. The FQD14N15TM is an ideal transistor for switching high current applications that require a low voltage signal. Lastly, the FQD14N15TM is an economical choice, as it is readily available at most electronics retailers.
The specific data is subject to PDF, and the above content is for reference
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