FQD12N20TM Discrete Semiconductor Products

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The FQD12N20TM is a Fairchild PowerTrench® MOSFET, which is a single N-channel logic level MOSFET that is designed to facilitate reliable and efficient power conversion. This MOSFET is unique in its dual functionality as both an analog and digital device, offering significant cost and functionality advantages.

The FQD12N20TM is a dual N-channel MOSFET (Metal-Oxide Semiconductor Field Effect Transistor), constructively similar to the single higher voltage FETs. This type of MOSFET has an insulated gate, which allowing relatively easy current flow between the source and drain when a voltage is applied between the two. This MOSFET uses two N-channel MOSFETs as opposed to a single P-channel FET. It offers higher switching speeds with larger current carrying capability. The device dissipates significantly less power compared to traditional MOSFET technologies, resulting in increased energy efficiency.

The FQD12N20TM has a number of features that make it particularly well suited for applications in a variety of different industries. It features the PowerTrench® design, which is designed to improve the on-state current limit and reduce power dissipation. It also features a fast switching time of 5.2ns, making it ideal for applications requiring high speed switching. In addition, the device has a low channel on-state resistance meaning low voltage drop at high currents. The rated drain-source breakdown voltage is high and the body diode forward voltage is low, providing superior protection and efficiency.

The FQD12N20TM is specifically designed to be used in power conversion applications. These applications require efficient and reliable power conversion. The FQD12N20TM provides low voltage and power dissipation, fast switching times, excellent protection, and improved thermal performance. This makes the device ideal for a wide range of applications including, but not limited to, industrial automation, cooling and HVAC, electric vehicles, lighting systems, and telecommunication.

The working principle behind the FQD12N20TM is similar to that of the single higher voltage FETs. When a voltage is applied between the source and drain, the FQD12N20TM produces a gate current, which enables current flow between the source and the drain. The FQD12N20TM is also designed to reduce power dissipation and improve energy efficiency. When the voltage is removed, the MOSFET switches off quickly, reducing power dissipation and increasing energy efficiency.

In conclusion, the FQD12N20TM is a dual N-channel MOSFET designed to offer improved efficiency and reliability in power conversion applications. It features PowerTrench® technology, which improves the on-state current limit and reduces power dissipation. Additionally, it has fast switching speeds, a low channel on-state resistance and superior protection qualities, making it suitable for a wide range of applications. The device operates by allowing a flow of current between the source and drain when a voltage is applied, and off quickly when the voltage is removed.

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